LiAlO2 Crystal and Substrates

LiAlO2 single crystal is a potential substrate for III-V nitride thin films, the lattice mismatch between LiAlO2 and GaN is only 1.4%. LiAlO2 substrate was stable enough to stand the high-temperature reductive atmosphere. Single-oriented GaN film can be grown on LiAlO2 substrates without using low-temperature buffer layers. Hangzhou Shalom EO can supply LiAlO2 wafer up to 2” in diameter.

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