Basic Properties:
| Density(g/cm3) | 7.34 | Atomic Coefficient | 60 |
| Molecular Formula | Gd2O2S | relative Molecular | 378 |
| Hygroscopicity | None | Refractive Index | 2.2 |
| Melting Point | 2070°C | Crystal Structure | Hexagonal Crystal System |
| Zeff | 61.1 |
| Appearance Dimension Precise | <0.,03mm@42x48mm | Flatness | <0.03@42x48mm |
| Pixel Size Consistency | ±0.01mm | Difference of Edge Reflection Thickness | <±0.05 |
X-ray Photoelectric Property:
| Light Output | 27000 ph/MeV | Peak Wavelength | 512nm |
| Decay Time | 3μs | Afterglow | <0.1%@3ms, <0.01%@100ms |
| Light Output Fluctuation of Difference Pixel | ≦5% | Light Output Fluctuation of Difference Arrays | ≦10% |
| Crosstalk (Cap0.085) | ≦8% | Irradiation Damage of GOS Ceramic Array | 20% of 1 Mrad |
Gadolinium oxysulfide, or GOS (Gd2O2S: Pr), is a ceramic scintillation material with a hexagonal crystal structure. GOS crystal has good chemical stability, excellent machinability, and is harmless to the environment. GOS doped with rare earth ion features a high light output and a shallow level of afterglow (less than 0.1% at 3 ms). The emission peak of GOS scintillator ceramics ranges from 470nm to 900 nm, which matches well with the spectral sensitivity of silicon photodiodes (Si PD).
Hangzhou Shalom EO offers GOS scintillator arrays with linear or two-dimensional designs. Our GOS scintillation arrays find widespread usage in Computerized Tomography (CT) scanners, security devices, and non-destructive testing systems. Besides, Shalom EO also offers GOS scintillation arrays coupled with silicon photodiodes.
1. Curve: X-ray excited luminescence spectrum of GOS ceramic from Hangzhou Shalom EO
