Specifications of BBO Pockels cells
|Optical Transmission||>98%||Damage Threshold||500MW/cm2 @ 10ns, 1064nm|
|Wavefront Distortion @ 1064||< Lambda/8||Typical Capacitance||< 3pF|
|Outline Dimension||φ25.4 x 44mm|
Physical properties of BBO:
|Crystalline structure||Trigonal, space group R3c, Point group 3m||Cell Parameters||a = b = 12.532 Å, c = 12.717Å, Z = 6|
|Melting point||1095±5℃||Phase transition point||925±5℃|
|Optical Homogeneity||δn ~ 10-6 /cm||Mohs hardness||4|
|Density||3.85 g/cm3||Specific heat||1.91J/cm3 xK|
|Hydroscopicity||Low||Thermal expansion coefficients||a,4 x 10-6/K;c, 36x 10-6/K|
|Thermal Conductivity||⊥c,1.2W/m/K; //c, 1.6W/m/K||Absorption Coefficient||< 0.1% /cm (at 1064 nm)|
Optical properties of BBO:
|Transparency Range||189-3500 nm||Refractive Indices|
at 1064 nm
at 800 nm
at 532 nm
at 400 nm
at 266 nm
no = 1.6545, ne = 1.5392
no = 1.6606, ne = 1.5444
no = 1.6742, ne = 1.5547
no = 1.6930, ne = 1.5679
no = 1.7585, ne = 1.6126
|Thermo-optic Coefficients||dno/dT = -9.3 x 10-6 /°C|
dne/dT = -16.6 x 10-6 /°C
|Electro-optic Coefficients||γ11 = 2.7 pm/V, γ22, γ31 < 0.1 γ11|
|Effective Nonlinearity Expressions||dooe= d31 sinθ +(d11 cos3φ - d22 sin3φ) cosθ|
deoe= (d11 sin3φ + d22 cos3φ) cos2θ
|Half-wave Voltage||48 kV (at 1064 nm)|
|NLO Coefficients||d11 = 5.8 x d36(KDP)|
d31 = 0.05 x d11
d22 < 0.05 x d11
|Damage Threshold (Bulk)|
at 1064 nm
at 532 nm
5 GW/cm2 (10 ns); 10 GW/cm2 (1.3 ns)
1 GW/cm2 (10 ns); 7 GW/cm2 (250 ps)
|Phase-matchable SH Wavelengths:||189 - 1750 nm|
Beta BBO Pockels Cells or beta barium borate pockels cells exhibit significant advantages over other materials in terms of laser power handling abilities, temperature stability, and substantial freedom from piezoelectric ringing. Beta BBO Pockels cells are the most attractive candidates for high repetition rate Q-switching, pulse picking at up to 3 MHz, laser cavity dumping, regenerative amplifier control and beam chopper. BBO pockels cells are the better option than KDP pockels cells in the field of high repetition rate and high power applications. And on account for the low piezoelectric coupling coefficients of BBO, our cells could generate pulses with repetition rates of hundreds of kilohertz.
Hangzhou Shalom EO offers the off-the-shelf and custom BBO Pockels Cells with high damage threshold, low insertion loss, high extinction ratio, minimal piezoelectric ringing and competitive price. BBO Pockels Cells with both Single and double BBO crystal design and low -voltage geometry are available upon requests. Besides, we also offer BBO crystals for EO applications.
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Because it relies on the electro-optical effect, switching time - aided by the low capacitance of the Electro-Optical Q Switch is very fast, therefore it has surpassing performance for high repetition rate lasers up to 1MHz. All-solid-state short-cavity Q-switched laser using BBO electro-optic Q-switch can generate high-energy laser with a pulse width of less than 4ns.
Without water cooling, the BBO electro-optical Q switch can be turned off and withstand up to 150W intracavity oscillation optical power (laser output power up to 50W).
BBO crystals has a wide transparency range of 189nm to 3500nm, which allows it to be used in diverse applications from UV to NIR spectrum.
Comparing to LiNbo3, BBO crystals are much less impaired by piezoelectric when voltage is applied. The other important feature of BBO electro-optics is their very low absorption and associated laser-induced thermal birefringence. Due to the low absorption, very little optical heating will occur at operating wavelengths in the visible and near IR.
BBO has a comparatively small electro-optic coefficient, and hence high applying voltage.Shalom EO offers customized BBO crystals with required dimensions as well. BBO has a comparatively small electro-optic coefficient, and hence high applying voltage.Shalom EO offers customized BBO Pockels Cells with required dimensions as well. Our panel of engineers could offer professional consultancy and help you ascertain the optimized solution for your need.
Features of BBO crystal：
Fig.1 Qualitative comparison of acoustic ringing in BBO and LiNbO3
The intensity transmitted through the LiNbO3 Pockels cell varies greatly due to piezoelectric effects, whereas the light transmitted through the
BBO Pockels cell follows the decay of the applied high voltage pulse with no evident acoustic ringing
Fig.2 Transparency Curve of BBO crystal
Side physical effects of Pockels cells:
When it comes to practical applications of Pockels cells, one may need to take some additional side effects into account:
Calculation of Quarter-wave Voltage
The voltage required to produce a retardance of π radians is called the halfwave voltage or simply Vπ. For an optical input linearly polarized 45o applying a halfwave voltage rotates the polarization by 90o. When the output wave is passed through a linear the resultant can be rapidly modulated from maximum intensity to minimum intensity by rapidly changing the voltage applied to the crystal from 0 volts to Vπ.
The halfwave voltage of BBO is dependent on the optical wavelength and is given by:
Where λ=optical wavelength
L=optical path length
no=ordinary indices of refraction
EO Q-Switch 1/4Wave Voltage Vs wavelength (3x3x20mm)
1/4 Wave Voltage @1030nm : Vπ/2 =3388V