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  • Ti:Sapphire Crystals
  • Ti:Sapphire Crystals

Ti:Sapphire Crystals


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Specifications:

Orientation Optical axis C normal to rod axis Ti2O3 Concentration 0.06 - 0.26atm %
Figure Of Merit(FOM) 100~200 α490 1.0-4.0cm-1
Diameter 2-30mm or specified Path Length 2-30mm or specified
End Configurations Flat/Flat or Brewster/Brewster ends Flatness <λ/10 @ 633nm
Parallelism <10 arc sec Surface Finishing <20/10scratch/dig to MIL-PRF-13830B
Wavefront Distortion <λ/4 per inch

 

Physical and Optical Properties:

Chemical Formula Ti3+: Al2O3 Crystal Structure Hexagonal
Lattice Constants a=4.758, c=12.991 Density 3.98 g/cm3
Melting Point 2040℃ Mohs Hardness 9
Thermal Conductivity 52 W/m/k
Titanium doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and high power outputs. The Ti:Sapphire crystals of Shalom EO is grown by the method of Temperature Gradient Technique (TGT), the large-sized (Dia.30x 30mm) Ti:Sapphire crystal in high quality free of light scatter, with the dislocation density less than 102cm-2 could be provided. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (a490= 4.0cm-1), high gain and laser damage threshold.

Application Notes:

  1. The tunable wavelengths that cover a broad range from 700 to 1000nm make Ti:Sapphire an excellent substitute for dye lasers in many applications.
  2. Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and DUV (up to 193nm) laser with ultrafast pulses below 10fs.
  3. Ti:Sapphire is also widely used as the pumping source of OPOs greatly to expand the tunable range.