Specifications:
Silicon Photodiode Arrays:
| Element Pitch | 1.575mm |
| Element Effective Width | 1.4mm |
| Element Effective Length | 2.5mm |
| Number of elements | 16 |
| Spectrum Response Range | 350-1100nm |
| Peak Sensitivity Wavelength | 950nm |
| Photosensitivity@550nm | Typ. 0.4, Min. 0.36A/W |
| Dark Current@-10mV | Typ. 5, Max. 20pA |
| Terminal Capacitance@0V, f=10kHz | Typ. 41, Max. 50pF |
GOS Scintillator:
| GOS Thickness | 0.145mm |
| GOS Length | 25.4mm |
| GOS Width | 3.5mm |
CsI Scintillator:
| CsI Thickness | 5.0mm |
| CsI Length | 25.4mm |
| CsI Width | 3.5mm |
| CsI Element Pitch | 1.575mm |
| CsI Element Width | 1.4mm |
| CsI Element Height | 3.1mm |
| CsI Element Thickness | 4.0mm |
Performance of Scintillators:
| Material | GOS ceramic (Gd2O2S:Pr) | CsI (Tl)(Cesium Iodide) |
| Peak Emission Wavelength | 512nm | 550nm |
| Decay Time | 3000ns | 1000ns |
| Refractive Index | 2.2 | 1.79 |
| Afterglow | 0.01% @20ms | <1% @20ms |
| Density | 7.34 g/cm^3 | 4.51 g/cm^3 |
| Non-uniformity of Sensitivity | +/- 15% | +/- 15% |
1.575mm pitch x 16 element Si Pohitodiode Coupled with GOS, CsI, Code: SA-PD6404A-16-1.575.
Hangzhou Shalom EO offers a series of silicon photodiodes. our standard photodiodes feature 16 elements and could be coupled with GOS, and CsI. 3 standard modules are optional, including 2 modules of 1.575 element pitch and 1 module of 2.5 element pitch. The standard modules each consist of two Si photodiodes, one is coupled with CsI(Tl), which generates sufficient light output for high-energy detection, and one is coupled with a GOS ceramic scintillation detector, which is assigned for low-energy detection. Two Si PDs in combination complete the detection of energy levels from low to high. Besides the standard versions, we also provide silicon photodiodes coupled with various scintillation materials such as CdWO4, etc.
Shalom EO’s scintillation detection arrays feature ultra-low dark current, high response speed, and low terminal capacitance, and the photosensitivity spectrum stretches from 350-1100nm, peaking at approx. 950nm. Additionally, this module is compact and lightweight, allowing easy integration, and requires a low maximum reverse voltage.
