Basic Properties:
| Density (g/cm3) | 7.13 | Melting Point (K) | 1323 |
| Thermal Expansion Coefficient (C-1 ) | 7 x 10-6 | Cleavage Plane | none |
| Hardness (Mho) | 5 | Hygroscopic | no |
| Wavelength of Emission Max. (nm) | 480 | Lower Wavelength Cutoff (nm) | 320 |
| Refractive Index @ Emission Max | 2.15 | Primary Decay Time (ns) | 300 |
| Light Yield (photons/keVγ) | 8-10 | Photoelectron Yield [% of NaI(Tl)] (for γ-rays) | 15 - 20 |
| Temperature Response | -1.2%/℃ | Neutron Capture Cross-section | 1.47b |
| Afterglow @ 20ms | 150ppm | ||
Specifications:
| Growth Method | Bridgman | Formula | Bi4Ge3O12 |
| Maximum Dimension | ∅ 75 mm x 300 mm | Available Items | Single crystal and arrays |
BGO crystal is one of the most widely used scintillation materials of the oxide type. It has a high Z, high density scintillation material. Due to the high atomic number of bismuth (83) and the material's high density of 7.13 g/cm3, BGO is a very efficient gamma ray absorber. Given the high Z value of the material, the photo fraction for gamma ray absorption is high, as a result very good peak-to-total ratios are observed. Due to these features, BGO crystals are used in high-energy physics (scintillators for electromagnetic calorimeters and detecting assemblies of accelerators), spectrometry and radiometry of gamma-radiation, positron tomography.
Applications:
Applications:
