Basic Properties:
| Melting Point (°C) | 1598 | Density (g/cm3) | 7.9 |
| Hygroscopic | None | Hardness (ns) | 4~4.5 |
| Wavelength of Emission Max. (nm) | 475 | Refractive Index @ Emission Max | 2.2~2.3 |
| Decay Time (ns) | 14000 | Light Yield (photons/MeV) | 12000~15000 |
| Photoelectron Yield (% of NaI(Tl)) (for γ-rays) | 30~50 | Afterglow(%@3ms) | <0.1 |
| Radiation Length(cm) | 1.06 | ||
Specifications:
| Growth Method | Bridgman | Maximum Dimension | ∅ 80 mm x 200 mm |
| Available Items | Single crystal and 1D array or 2D array | Inhomogeneity between pixels in array | <15% |
CdWO4 crystal is characterized by high density, high atomic number and relatively high light yield with extremely low decay time.When subjected to x-ray irradiation, the after-glow of CdWO4 is very slow typically less than 0.1% after 3ms, and demonstrate very good resistance. All of these features are significant and make CdWO4 a primary scintillation crystal for x-ray CT and in security inspection.
Abilities:
Application Notes:
