Basic Properties:
| Density(g/cm3) | 4.51 | Melting Point (°C) | 621 |
| Cleavage Plane | None | Hardness(Mohs) | 2 |
| Hygroscopic | Slightly | Refractive Index at Emission Peak | 1.95 |
| Emission Peak Wavelength (nm) | 315 | Lower Wavelength Cutoff (nm) | 260 |
| Decay Time (ns) | 16 | Light Yield (photons/Mev/γ) | 2x10^3 |
| Thermal Expansion Coefficient (K^-1) | 49x10^-6 | Photoelectron Yield (% of NaI(Tl) ) (γ-rays) | 4~6 |
| Afterglow (after 20ms) (%) | 2x10^3 |
Emission Spectrum of pure CsI, CsI(Tl) and CsI(Na):
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CsI (Cesium Iodide) Scintillation Crystal, as one of the CsI scintillator class, is a scintillator material with a light emission spectrum located between the UV and the visible wavelength region, and the emission peak of un-activated CsI scintillator sits around 310-420nm, depending on the radiation interaction and excitation source. The light yield is moderate compared to doped CsI such as CsI(Tl) or CsI(Na) but still sufficient for certain detection applications.
The most distinct advantage of pure, undoped CsI crystal compared to its doped siblings CsI(Tl) and CsI(Na) is its capabilities in fast timing applications attributed to its exceptionally small decay time. Besides, undoped CsI scintillation crystals exhibit a unique combination of fast and slow luminescence components. Its emission is composed of fast intrinsic luminescence (10ns) peaked around 305nm and a slow component (100-4000 ns) around 350-600nm. The 10ns fast component makes pure CsI an excellent choice for time-sensitive measurements.
Also, as a dense material with a high atomic number, CsI crystal offers high stopping power, which, in addition to the fast-timing characteristics and good radiation hardness, makes CsI a great choice for high energy physical experiments.
The weakness of undoped CsI relative to Tl-doped CsI or Na-doped CsI is that the light output of pure CsI crystal is lower than CsI(Tl) and CsI(Na), so pure CsI is selected when timing resolution is prioritize over light yield. Another flaw of pure CsI is that its emission spectrum might not match as well with the photodetectors.
CsI crystal is a soft and malleable material with no cleavage plane, which contributes to its robust characteristics excellent for well-logging, space research, or other applications where severe shock conditions are encountered. Pure CsI is also much less hygroscopic than CsI(Tl) (however, it can still benefit from protective coating or encapsulation).
Hangzhou Shalom EO supplies custom CsI Scintillation Crystals with a maximum size of diameter 90mm x 300mm length and above, this page highlights our undoped CsI, whereas we also provide CsI(Tl)/Thallium doped CsI and CsI(Na)/Sodium doped CsI. The CsI(Tl) can be grown up to a size of 400mm x 400mm x 100mm. Shalom EO’s undoped CsI crystals feature premium scintillation properties with an emission peak at 315nm wavelength, high stopping power, and fast timing edge. The CsI crystals have a decay time of 16ns, optimized for specialist applications of high energy, nuclear, space, and medical physics requiring precise timing.
In Shalom EO, we engage the eco-conscious Bridgman Method to grow the CsI in bulk scales. Our industrial expertise and manufacturing prowess allow us to produce crystals in custom shapes and dimensions, tailored to meet your specific requirements and we uphold quality assurance at each phase of manufacturing. Crystals of custom shapes and dimensions, reflectors are available, and compatible electronics or photodetectors (PMTs, SiPMs, or PD) can be integrated. We also provide CsI one-dimensional line arrays and CsI two-dimensional plane arrays.
CsI, CsI(Tl), CsI(Na) Property Comparison Chart:
| Parameters | CsI(Tl) | CsI(Na) | CsI (Undoped) |
| Density | 4.51 | 4.51 | 4.51 |
| Melting Point (°C) | 621 | 621 | 621 |
| Thermal Expansion Coefficient (K^-1) | 54x10^-6 | 49x10^-6 | 49x10^-6 |
| Cleavage Plane | None | None | None |
| Hardness (Mohs) | 2 | 2 | 2 |
| Hygroscopic | Slightly | Yes | Slightly |
| Wavelenth of Emission Peak (nm) | 550 | 420 | 315 |
| Lower Wavelength Cutoff (nm) | 320 | 300 | 260 |
| Refractive Index at Emission Maximum | 1.79 | 1.84 | 1.95 |
| Decay Time (μs) | 1 | 0.63 | 0.016 |
| Afterglow (after 20ms) (%) | <0.5 (normal) | 0.5~5.0 | / |
| Light Yield (photons/Mev/γ) | 52~56x10^3 | 38~44x10^3 | 2x10^3 |
| Photoelectron Yield (% of NaI(Tl)) (γ-rays) | 45 | 85 | 4~6 |
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