Specifications:
| Material | InAs single crystal | Orientation | <100> |
| Crystal Structure | Cube | Density | 5.66g/cm3 |
| Melt Point | 942℃ | Bandgap(@300 K) | 0.45eV |
| Size(mm) | 10x10x0.5mm, 5x5x0.5mm, D50.8x0.5mm, D76.2x0.5mm |
Surface Roughness | Ra≤5Å |
| Polishing | SSP (single surface polished) or DSP (double surface polished) |
Package | 1000 grade clean room, 100 grade bags |
Chemical Properties of InAs Crystal:
| Single Crystal | Doped | Conduction Type | Carrier Concentration | Mobility Ratio | Dislocation Density |
| InAs | / | N | 5x1016 | 2x104 | <5x104 |
| InAs | Sn | N | (5-20)x1017 | >2000 | <5x104 |
| InAs | Zn | P | (1-20)x1017 | 100-300 | <5x104 |
| InAs | S | N | (1-10)x1017 | >2000 | <5x104 |
Indium Arsenide (InAs) single crystal is widely used as the substrate material for heterojunction materials (InAsSb/In－AsPSb,InNAsSb) which is used in making infrared emitting devices with 2～14μm. Indium Arsenide （InAs) can also use as a substrate material for the epitaxial growth of AlGaSb- superlattice structure materials for medium wave infrared quantum cascade laser(QCL). InAs is widely used in gas monitoring, low loss optical fiber communication. With high mobility Ratio, it is an ideal material for Hall semiconductors. As one kind of single crystal substrate, Indium Arsenide must have low dislocation density, good lattice integrity, appropriate electrical parameter and high homogeneity. The mainly growth method of this material is classical liquid encapsulation pulling method(LEC).
Hangzhou Shalom EO offers the cutom Indium Arsenide substrate and wafers according to customer's request, with good surface roughness less than 0.5nm and clean package of 1000 grade clean room and 100 grade bags.
