Size | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 |
dia2” x 0.33mm, dia2” x 0.43mm, dia4"x0.35mm | |
Thickness | 0.5mm, 1.0mm | Polishing | Single-side or double-side Polished |
Crystal Orientation | <001>±0.5° | R\Redirection Precision | ±0.5° |
Redirection the Edge | 2°(special in 1°) | Note | Special sizes and orientations are available upon request |
Ra: | ≤5Å(5µm×5µm) |
Basic Properties:
Growth Method | MOCVD | Crystal Structure | M6 |
Unit Cell Constant | a=3.08 Å c=15.08 Å | Sequence | ABCACB |
Direction | <0001> 3.5° | With Clearance | 2.93 eV |
Hardness | 9.2(mohs) | Heat Travels @300K | 5 W/ cm.k |
Dielectric Constants | e(11)=e(22)=9.66 e(33)=10.33 |
Silicon Carbide (SiC) Single Crystal is a semiconductor with the chemical composition of silicon and carbon. Its remarkable thermal conduction, superior mechanical resilience, broad bandgap, and large electric field breakdown strength draw interest in the use of SiC as a semiconductor material. With exceptional hardness and lightweight nature, SiC wafers and substrates serve as robust platforms for the production of high-power, high-frequency electronic components. In comparison to traditional silicon devices, SiC-based power devices boast swifter switching speeds, elevated voltages, diminished parasitic resistances, compact dimensions, and reduced cooling necessities, attributed to their endurance to withstand high temperatures. Its main application areas are high-frequency power electronic devices (Schottky diodes, MOSFET, JFET, BJT, PIN diodes, IGBT), RF transistors, and optoelectronic devices (it is applied in backing material of blue LED).
Hangzhou Shalom EO offers custom SiC crystal wafers, the wafers offer optimum results in LED solid-state lighting and high-frequency devices, in extreme environmental applications such as aerospace, military industry, and nuclear energy.