Zinc oxide (ZnO) Crystal and Substrates

Single side or double sides polished optional
Fine physical and chemical stability
Wide bandgap
Customized substrates and wafers are available
Applications: wide bandgap semiconductor thin growth, GaN film growth, semiconductor photoelectronic devices, magnetic semiconductors, blue and violet optoelectronics applications

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Specifications:

Material	ZnO single crystal	Size(mm)	25×25×0.5, 10×10×0.5, 10×5×0.5, 5×5×0.5
Orientation	<0001>, <11-20>, <10-10>±0.5°	Polishing	Single or Double surface polished (SSP or DSP)
Transparency Range	0.4-0.6 µm; > 50%@2µm	Surface Roughness	Ra: ≦0.5nm

Note: customized special orientations and sizes of the substrate are available.

Basic Properties:

Crystal Structure	M6	Lattice Constant	a=3.252Å c=5.313 Å
Density	ε=5.7	Hardness	4(mohs)
Melt Point(℃)	1975	Coefficient of Thermal Expansion	a /6.5 x 10^-6 /℃ c /3.7 x 10^-6 /℃
Specific Heat(g.m)	0.125 cal	Pyroelectricity Constant	1200 mv/k @ 300 ℃
Thermal Conductivity(cm/k)	0.006 cal	Chemical Stability	Insoluble in water

Zinc Oxide (ZnO) crystal substrates are a wide bandgap semiconductor material. As a single crystal semiconductor, the bandgap is in the 3.4 eV range which makes it attractive for manifold blue and violet optoelectronic applications as well as UV devices. The availability of large-size ZnO crystals also gives ZnO a competitive edge over GaN. substrates show a distinguished advantage for the thin film growth Gallium Nitride (GaN). Like GaN, it has a wurtzite structure, with lattice constants well matched to GaN (a=3.249, c=5.205). The lattice mismatch between ZnO and GaN is only ε=0.017. Perhaps the most important attribute is that it is a soft compliant material that is believed to take up the lattice stress in preference to the growing GaN thin film. However, ZnO has the disadvantage that it dissociates in ammonia at temperatures above 600°C.

Hangzhou Shalom EO offers customized high-quality ZnO crystal substrates and wafers.