|Orientation||(100) 0°±0.5°, (100) 2°±0.5°off toward <111>A,
(100)15°±0.5°off toward <111>A
|Size(mm)||25×25×0.3, 10×10×0.35, 10×5×0.35, 5×5×0.35|
|Polishing||SSP (single surface polished) or
DSP (double surface polished)
|Growth Method||VGF/ HB||Crystal Structure||Zinc Blende|
|Appearance||Very dark red, vitreous crystals||Density||5.3176 g/cm3|
|Lattice Constant||5.65×10-10m||Molar Mass||144.645 g•mol-1|
|Band Gap@300 K||1.424eV||Electronic Mobility @300K||8500 cm2/(V×s)|
|Thermal Conductivity@300K||0.55 W/(cm×K)||Chemical Stability||Insoluble in water, ethanol, methanol,
Acetone soluble in HCl
|Single Crystal||doped||Conduction Type||Carrier Concentration||Dislocation Density|
|GaAs||Si||No||>5×1017 cm-3||<5×105 cm-2|
Gallium Arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure.
Gallium Arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others. And this kind of substrates has good performance under high frequency, high temperature and low temperature, low noise and high radiation tolerance.