| Material | GaSb single crystal | Orientation | <100> |
| Crystal Structure | Cube | Density | 5.53g/cm3 |
| Melt Point | 712℃ | Bandgap(@300 K) | 0.67eV |
| Size(mm) | 10x10x0.5mm, 5x5x0.5mm, D50.8x0.5mm, D76.2x0.5mm |
Surface Roughness | Ra≤5Å |
| Polishing | SSP (single surface polished) or DSP (double surface polished) |
Package | 1000 grade clean room, 100 grade bags |
Chemical Properties of GaSb Crystal:
| Single Crystal | Doped | Conduction Type | Carrier Concentration | Mobility Ratio | Dislocation Density |
| GaSb | / | P | (1-2)×1017 | 600-700 | <1x104 |
| GaSb | Zn | P | (5-100)x1017 | 200-500 | <1x104 |
| GaSb | Te | N | (1-20)x1017 | 2000-3500 | <1x104 |
The lattice constant of GaSb matches well with each ternary, quaternary and III-V compound solid solution in the bandgap of 0.8~4.3μm, which make it a good substrate material used in infrared optical fiber transmission. With high lattice restricted mobility than GaAs, GaSb is expected to have good prospects in the field of microwave.
