| Material | GaSb single crystal | Orientation | <100> |
| Crystal Structure | Cube | Density | 5.53g/cm3 |
| Melt Point | 712℃ | Bandgap(@300 K) | 0.67eV |
| Size(mm) | 10x10x0.5mm, 5x5x0.5mm, D50.8x0.5mm, D76.2x0.5mm |
Surface Roughness | Ra≤5Å |
| Polishing | SSP (single surface polished) or DSP (double surface polished) |
Package | 1000 grade clean room, 100 grade bags |
Chemical Properties of GaSb Crystal:
| Single Crystal | Doped | Conduction Type | Carrier Concentration | Mobility Ratio | Dislocation Density |
| GaSb | / | P | (1-2)×1017 | 600-700 | <1x104 |
| GaSb | Zn | P | (5-100)x1017 | 200-500 | <1x104 |
| GaSb | Te | N | (1-20)x1017 | 2000-3500 | <1x104 |
The lattice constant of Gallium Antimonide (GaSb) matches well with each ternary, quaternary and III-V compound solid solution in the bandgap of 0.8~4.3μm, which make it a good substrate material used in infrared optical fiber transmission. With high lattice restricted mobility than GaAs, GaSb is expected to have good prospects in the field of microwave.
Hangzhou Shalom EO offer the custom GaSb crystals and substrates according to customer’s request, the maxium diameter of 3” is available. Three types of GaSb materials: non-doping, Zinc (Zn) doped and Tellurium (Te) doped GaSb are offered. All substrates are strictly tested and packing in 1000 grade clean room and 100 grade bags.
