InP(Indium Phosphide) Crystal and Substrates

Inquire Us

Specifications:

Material	InP single crystal	Orientation	<100>
Size(mm)	Dia50.8×0.35mm,10×10×0.35mm 10×5×0.35mm	Surface Roughness	Ra:≤5A
Polishing	SSP (single surface polished) or DSP (double surface polished)

Chemical Properties of InP Crystal:

Single Crystal	Doped	Conduction Type	Carrier Concentration	Mobility Ratio	Dislocation Density	Standard Size
InP	/	N	(0.4-2)×10¹⁶	(3.5-4) ×10³	5×10⁴	Φ2×0.35mm Φ3×0.35mm
InP	S	N	(0.8-3) ×10¹⁸ (4-6) ×10¹⁸	(2.0-2.4) ×10³ (1.3-1.6) ×10³	3×10⁴ 2×10³	Φ2×0.35mm Φ3×0.35mm
InP	Zn	P	(0.6-2) ×10¹⁸	70-90	2×10⁴	Φ2×0.35mm Φ3×0.35mm
InP	Fe	N	10⁷-10⁸	≥2000	3×10⁴	Φ2×0.35mm Φ3×0.35mm

Basic Properties:

Crystal Structure	Tetrahedral(M4)	Lattice Constant	a = 5.869 Å
Density	4.81g/cm³	Melt Point	1062 °C
Molar Mass	145.792 g/mol	Appearance	Black cubic crystals
Chemical Stability	Slightly soluble in acids	Electron Mobility(@300K)	5400 cm²/(V·s)
Bandgap(@300 K)	1.344eV	Thermal Conductivity(@300K)	0.68 W/(cm·K)
Refractive Index	3.55(@632.8nm)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. InP, as one kind of compound semiconductor material, is the necessary material for LD, LED and optical detectors. With stable physical and chemical properties, InP is widely used in optical fiber communication, microwave, millimeter wave(MMV), radiation-resistant solar cells and other fields.

InP is also used in high-power and high-frequency electronics (High-electron-mobility transistor, Heterojunction bipolar transistor) because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.