|Material||InP single crystal||Orientation||<100>|
|Polishing||SSP (single surface polished) or
DSP (double surface polished)
Chemical Properties of InP Crystal:
|Single Crystal||Doped||Conduction Type||Carrier Concentration||Mobility Ratio||Dislocation Density||Standard Size|
|Crystal Structure||Tetrahedral(M4)||Lattice Constant||a = 5.869 Å|
|Density||4.81g/cm3||Melt Point||1062 °C|
|Molar Mass||145.792 g/mol||Appearance||Black cubic crystals|
|Chemical Stability||Slightly soluble in acids||Electron Mobility(@300K)||5400 cm2/(V·s)|
|Bandgap(@300 K)||1.344eV||Thermal Conductivity(@300K)||0.68 W/(cm·K)|
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. InP, as one kind of compound semiconductor material, is the necessary material for LD, LED and optical detectors. With stable physical and chemical properties, InP is widely used in optical fiber communication, microwave, millimeter wave(MMV), radiation-resistant solar cells and other fields.
InP is also used in high-power and high-frequency electronics (High-electron-mobility transistor, Heterojunction bipolar transistor) because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.