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Gallium Antimonide (GaSb) Crystals and Substrates

  • Matches well with each ternary, quaternary and III-V compound solid
  • Maximium diameter: 3 inches
  • Non-doping, Zn doped and Te doped GaSb are available.
  • Surface Roughness: Ra < 0.5nm
  • Clean package: 1000 grade clean room and 100 grade bags
  • Applications: Infrared optical fiber transmission, potential application in microwave field.
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Material GaSb single crystal Orientation <100>
Crystal Structure Cube Density 5.53g/cm3
Melt Point 712℃ Bandgap(@300 K) 0.67eV

10x10x0.5mm, 5x5x0.5mm,

D50.8x0.5mm, D76.2x0.5mm

Surface Roughness Ra≤5Å
Polishing SSP (single surface polished) or
DSP (double surface polished)
Package 1000 grade clean room, 100 grade bags


Chemical Properties of GaSb Crystal:

Single Crystal Doped Conduction Type Carrier Concentration Mobility Ratio Dislocation Density
GaSb / P (1-2)×1017 600-700 <1x104
GaSbZn P (5-100)x1017 200-500 <1x104
GaSb Te N (1-20)x1017 2000-3500 <1x104


The lattice constant of Gallium Antimonide (GaSb) matches well with each ternary, quaternary and III-V compound solid solution in the bandgap of 0.8~4.3μm, which make it a good substrate material used in infrared optical fiber transmission. With high lattice restricted mobility than GaAs, GaSb is expected to have good prospects in the field of microwave. 

Hangzhou Shalom EO offer the custom GaSb crystals and substrates according to customer’s request, the maxium diameter of 3” is available. Three types of GaSb materials: non-doping, Zinc (Zn) doped and Tellurium (Te) doped GaSb are offered. All substrates are strictly tested and packing in 1000 grade clean room and 100 grade bags.