Gallium Antimonide (GaSb) Crystals and Substrates

Matches well with each ternary, quaternary and III-V compound solid
Maximium diameter: 3 inches
Non-doping, Zn doped and Te doped GaSb are available.
Surface Roughness: Ra < 0.5nm
Clean package: 1000 grade clean room and 100 grade bags
Applications: Infrared optical fiber transmission, potential application in microwave field.

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Specifications:

Material	GaSb single crystal	Orientation	<100>
Crystal Structure	Cube	Density	5.53g/cm³
Melt Point	712℃	Bandgap(@300 K)	0.67eV
Size(mm)	10x10x0.5mm, 5x5x0.5mm, D50.8x0.5mm, D76.2x0.5mm	Surface Roughness	Ra≤5Å
Polishing	SSP (single surface polished) or DSP (double surface polished)	Package	1000 grade clean room, 100 grade bags

Chemical Properties of GaSb Crystal:

Single Crystal	Doped	Conduction Type	Carrier Concentration	Mobility Ratio	Dislocation Density
GaSb	/	P	(1-2)×10¹⁷	600-700	<1x10⁴
GaSb	Zn	P	(5-100)x10¹⁷	200-500	<1x10⁴
GaSb	Te	N	(1-20)x10¹⁷	2000-3500	<1x10⁴

The lattice constant of Gallium Antimonide (GaSb) matches well with each ternary, quaternary and III-V compound solid solution in the bandgap of 0.8~4.3μm, which make it a good substrate material used in infrared optical fiber transmission. With high lattice restricted mobility than GaAs, GaSb is expected to have good prospects in the field of microwave.

Hangzhou Shalom EO offer the custom GaSb crystals and substrates according to customer’s request, the maxium diameter of 3” is available. Three types of GaSb materials: non-doping, Zinc (Zn) doped and Tellurium (Te) doped GaSb are offered. All substrates are strictly tested and packing in 1000 grade clean room and 100 grade bags.