Specification
| Type | GaN-FS-10 | GaN-FS-15 |
| Size | 10.0mm×10.5mm | 14.0mm×15.0mm |
| Thickness | Rank 300, Rank 350, Rank 400 |
300 ± 25 µm, 350 ± 25 µm, 400 ± 25 µm |
| Orientation | C-axis(0001) ± 0.5° | |
| TTV | ≤15 µm | |
| BOW | ≤20 µm | |
| Carrier Concentration | >5x1017/cm3 | / |
| Conduction Type | N-type | Semi-Insulating |
| Resistivity(@300K) | < 0.5 Ω•cm | >106 Ω•cm |
| Dislocation Density | Less than 5x106 cm-2 | |
| Usable Surface Area | > 90% | |
| Polishing | Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
|
| Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
|
Gallium Nitride (GaN) is a semiconductor material with a wide direct bandgap (3.4 eV), strong atomic bonds (which contribute to its stable physical and chemical properties), exceptional thermal properties, and excellent radiation resistance. GaN (Gallium Nitride) crystals and wafers exhibit superior optoelectronic properties at short wavelengths, making them useful in LED applications (blue, green, UV-light) and ultraviolet detectors. GaN crystals and wafers are also suitable for manufacturing high-temperature semiconductor devices.
Hangzhou Shalom EO offers custom gallium nitride wafers and substrates according to customer's request, options including N-type and semi-insulating types of GaN wafers are available. Our gallium nitride crystals and wafers are widely used in various LEDs, blue light laser diodes ultra-violet (UV) laser diodes (LD), and electronic devices operating at high power and high frequencies.
