| Size(mm) | 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 Ф15, Ф20, Ф1″, Ф2″, Ф2.6″ |
Thickness | 0.5mm,1.0mm |
| Orientation | <100>, <001> | Orientation Tolerance | ±0.5° |
| Angle of Crystalline | Special size and orientation are available upon request | Redirection the Edge | 2°(special in 1°) |
| Surface Roughness | ≤5Å(5µm×5µm) | Polishing | SSP (single surface polished) or DSP (double surface polished) |
Basic Properties:
| Crystal Structure | M4 | Lattice Constant | a=5.17 Å c=6.26 Å |
| Melt Point(℃) | 1900 | Density | 2.62 g/cm3 |
| Hardness | 7.5(Mohs) | Color and Appearance | Transparent |
Lithium Aluminate (LiAlO2) single crystal with a corundum structure is an exceptional optional as the substrate for III-V nitride thin films since the lattice mismatch between LiAlO2 and Gallium Nitride (GaN) is only 1.4%. LiAlO2 substrate exhibits high chemical stabilities to withstand high-temperature reducing atmosphere. Single-oriented GaN film can be grown on LiAlO2 substrates without using low-temperature buffer layers. Hangzhou Shalom EO can provide LiAlO2 substrates up to 2” in diameter, with high surface roughness and clean packaging.
