Zinc oxide (ZnO) Crystal and Substrates

Inquire Us

Specifications:

Material	ZnO single crystal	Size(mm)	25×25×0.5, 10×10×0.5, 10×5×0.5, 5×5×0.5
Orientation	<0001>, <11-20>, <10-10>±0.5°	Polishing	Single or Double surface polished (SSP or DSP)
Transparency Range	0.4-0.6 µm; > 50%@2µm	Surface Roughness	Ra: ≦0.5nm

Note: customize special orientation and size of the substrate is available.

Basic Properties:

Crystal Structure	M6	Lattice Constant	a=3.252Å c=5.313 Å
Density	ε=5.7	Hardness	4(mohs)
Melt Point(℃)	1975	Coefficient of Thermal Expansion	a /6.5 x 10^-6 /℃ c /3.7 x 10^-6 /℃
Specific Heat(g.m)	0.125 cal	Pyroelectricity Constant	1200 mv/k @ 300 ℃
Thermal Conductivity(cm/k)	0.006 cal	Chemical Stability	Insoluble in water

Zinc Oxide (ZnO) has the potential to become the substrate material of choice for Gallium Nitride (GaN). Like GaN, it has a wurtzite structure, with lattice constants closely matches to GaN (a=3.249, c=5.205). The lattice mismatch between ZnO and GaN is only ε=0.017. Perhaps most important is that it is a soft compliant material which is believed to take up the lattice stress in preference to the growing GaN layer. It suffers from the drawback that it dissociates in ammonia at temperatures above 600°C. ZnO substrate is a good choice for epitaxial film growth of GaN.

Zinc oxide (ZnO) has a wide band-gap, ZnO crystal has a good lattice integrity, which is essential for the fabrication of high-quality ZnO-based semiconductor devices. ZnO wafers are widely used in high-efficiency semiconductor photocatalysis, semiconductor photoelectronic devices and magnetic semiconductors.

Hangzhou Shalom EO offers the customized high quality crystals substrates and wafers of ZnO according to customer's special request.