Orientation | <100>, <110>, <111> | Size(mm) | 10×3, 10×5, 10×10, 15×15, 20×15 |
Thickness | 0.5mm, 1.0mm | Size Tolerance | <±0.1mm |
Thickness Tolerance | <±0.015mm(special in<±0.005mm) | Polishing | SSP (single surface polished) or DSP (double surface polished) |
Redirection Precision | ±0.5° | Redirection the Edge | 2°(special in 1°) |
Basic Properties:
Crystal Structure | M3 | Melt Point(℃) | 1420 |
Density(g/cm3) | 2.4 | ||
Doping Material | No | b-doped | p-doped |
Type | Ⅰ | P | N |
Resistivity | >1000Ωcm | 10-3~104Ωcm | 10-3~104Ωcm |
EPD | ≤100∕cm2 | ≤100∕cm2 | ≤100∕cm2 |
O Content (/cm3) | ≤1~1.8×1018 | ≤1~1.8×1018 | ≤1~1.8×1018 |
C Content (/cm3) | ≤5×1016 | ≤5×1016 | ≤5×1016 |
Semiconductor silicon wafers are often made of high-purity polycrystalline silicon ingots using the CZ Method to grow silicon single-crystal ingots with different resistivities or using the Float Zone method. The Si wafers are manufactured in a controlled and organized manufacturing process that follows: crystal growth, slicing, chamfering/grinding (lapping), surface etching/polishing, cleaning, inspection, packaging, and other processes.
Doping with designed concentrations can be introduced into the silicon crystal lattice to alter its electrical properties and create regions with specific conductivity (n-type or p-type) required for semiconductor devices. Si wafers are also excellent platforms for the deposition of various thin films to achieve specific functions.
Hangzhou Shalom EO offers various grades of Silicon (Si) wafers and substrates, they are used as substrates for GaN (Gallium Nitride) epitaxial film growth, semiconductors, and solar cells.