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  • SiC (Silicon Carbide) Crystals and Substrates
  • SiC (Silicon Carbide) Crystals and Substrates

SiC (Silicon Carbide) Crystals and Substrates


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Specifications:

Size 10x3, 10x5, 10x10,
15x15, 20x15, 20x20
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm  
Thickness 0.5mm, 1.0mm Polishing Single or double
Crystal Orientation <001>±0.5° R\Redirection Precision ±0.5°
Redirection the
Edge
2°(special in 1°) Angle of Crystalline Special size and orientation are available upon request
Ra: ≤5Å(5µm×5µm)

 

Basic Properties:

Growth Method MOCVD Crystal Structure M6
Unit Cell Constant a=3.08 Å     c=15.08 Å  Sequence ABCACB
Direction <0001> 3.5° With Clearance 2.93 eV
Hardness 9.2(mohs) Heat Travels @300K 5 W/ cm.k
Dielectric Constants e(11)=e(22)=9.66 e(33)=10.33

SiC is a semiconductor containing silicon and carbon. Sic (Silicon Carbide) has thermal conductivity and great energy to penetrate electric field. There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices. SiC also has a very low coefficient of thermal expansion (4.0 × 10-6 /K) and experiences no phase transitions that would cause discontinuities in thermal expansion. The main application area of it are high frequency power electron devices(l Schottky diodes, MOSFET , JFET, BJT, PiN diodes, IGBT) and optoelectronic devices (it is widely applied in backing material of blue LED).