Size | 10x3, 10x5, 10x10, 15x15, 20x15, 20x20 |
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm | |
Thickness | 0.5mm, 1.0mm | Polishing | Single or double |
Crystal Orientation | <001>±0.5° | R\Redirection Precision | ±0.5° |
Redirection the Edge |
2°(special in 1°) | Angle of Crystalline | Special size and orientation are available upon request |
Ra: | ≤5Å(5µm×5µm) |
Basic Properties:
Growth Method | MOCVD | Crystal Structure | M6 |
Unit Cell Constant | a=3.08 Å c=15.08 Å | Sequence | ABCACB |
Direction | <0001> 3.5° | With Clearance | 2.93 eV |
Hardness | 9.2(mohs) | Heat Travels @300K | 5 W/ cm.k |
Dielectric Constants | e(11)=e(22)=9.66 e(33)=10.33 |
SiC is a semiconductor containing silicon and carbon. Sic (Silicon Carbide) has thermal conductivity and great energy to penetrate electric field. There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices. SiC also has a very low coefficient of thermal expansion (4.0 × 10-6 /K) and experiences no phase transitions that would cause discontinuities in thermal expansion. The main application area of it are high frequency power electron devices(l Schottky diodes, MOSFET , JFET, BJT, PiN diodes, IGBT) and optoelectronic devices (it is widely applied in backing material of blue LED).