Silicon Carbide (SiC) Crystals and Wafers

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Specifications:

Size	10x3, 10x5, 10x10, 15x15, 20x15, 20x20	dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness	0.5mm, 1.0mm	Polishing	Single or double
Crystal Orientation	<001>±0.5°	R\Redirection Precision	±0.5°
Redirection the Edge	2°(special in 1°)	Angle of Crystalline	Special size and orientation are available upon request
Ra:	≤5Å(5µm×5µm)

Basic Properties:

Growth Method	MOCVD	Crystal Structure	M6
Unit Cell Constant	a=3.08 Å c=15.08 Å	Sequence	ABCACB
Direction	<0001> 3.5°	With Clearance	2.93 eV
Hardness	9.2(mohs)	Heat Travels @300K	5 W/ cm.k
Dielectric Constants	e(11)=e(22)=9.66 e(33)=10.33

Silicon Carbide (SiC) is a semiconductor containing silicon and carbon. Sic (Silicon Carbide) has thermal conductivity and great energy to penetrate electric field. There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices. SiC also has a very low coefficient of thermal expansion (4.0 × 10^-6 /K) and experiences no phase transitions that would cause discontinuities in thermal expansion.The main application area of it are high frequency power electron devices (Schottky diodes, MOSFET , JFET, BJT, PIN diodes, IGBT) and optoelectronic devices (it is widely applied in backing material of blue LED).

Hangzhou Shalom EO offer the custom SiC wafers, they are widely used in the LED solid-state lighting and high-frequency devices, in applications of fields and extreme environmental applications such as aerospace, military industry, and nuclear energy.