SiC (Silicon Carbide) Crystals and Substrates

Inquire Us

Specifications:

Size	10x3, 10x5, 10x10, 15x15, 20x15, 20x20	dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness	0.5mm, 1.0mm	Polishing	Single or double
Crystal Orientation	<001>±0.5°	R\Redirection Precision	±0.5°
Redirection the Edge	2°(special in 1°)	Angle of Crystalline	Special size and orientation are available upon request
Ra:	≤5Å(5µm×5µm)

Basic Properties:

Growth Method	MOCVD	Crystal Structure	M6
Unit Cell Constant	a=3.08 Å c=15.08 Å	Sequence	ABCACB
Direction	<0001> 3.5°	With Clearance	2.93 eV
Hardness	9.2(mohs)	Heat Travels @300K	5 W/ cm.k
Dielectric Constants	e(11)=e(22)=9.66 e(33)=10.33

SiC is a semiconductor containing silicon and carbon. Sic (Silicon Carbide) has thermal conductivity and great energy to penetrate electric field. There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices. SiC also has a very low coefficient of thermal expansion (4.0 × 10^-6 /K) and experiences no phase transitions that would cause discontinuities in thermal expansion. The main application area of it are high frequency power electron devices(l Schottky diodes, MOSFET , JFET, BJT, PiN diodes, IGBT) and optoelectronic devices (it is widely applied in backing material of blue LED).