TGG(Terbium Gallium Garne) Crystals and Substrates

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Specifications:

Material	TGG(Terbium Gallium Garne) single crystal	Orientations	<111>±5 °
Wavefront Distortion	<λ/8 wave total @633nm	Extinction Ratio	A:>30dB，B:>28dB
Diameter Tolerance	±0.1mm	Length Tolerance	±0.05mm
Chamfer	0.2mm @ 45°	Flatness	<λ/10 wave at 633nm
Parallelism	<1 arc minutes	Perpendicularity	<5 arc minutes
Surface Quality	10/5 S/D per MIL-O13830A

Basic Properties:

Chemical Formula	Tb3Ga5O12	Crystal Structure	Cubic
Lattice Constant	a=12.355Å	Growth Method	Czochraiski
Density(g/cm³)	7.13	Hardness(mohs)	8.0
Melting Point(℃)	1725℃	Refractive Index	1.954 @1064nm
Thermal Conductivity	9.4×10^-6 /K	Verdet Constant	0.12min/Oe.cm at 1064nm

TGG single crystal, with large Verdet constant, low optical loss, high thermal conductivity and laser-damaged threshold, is widely applied in YAG, Ti doped sapphire lasers. TGG single crystal (Terbium Gallium Garne) is an excellent magneto-optical material used in various Faraday devices (Rotator and Isolator) in the range of 400nm-1100nm. (excluding 470 - 500nm) Therefore, it is widely used in measuring devices, lasers and optical fiber system. Shalom EO provides the customized and stocked TGG substrates for magnetic and ferroelectricity film growth.