Material | TGG(Terbium Gallium Garne) single crystal | Orientations | <111>±5 ° |
Wavefront Distortion | <λ/8 wave total @633nm | Extinction Ratio | A:>30dB,B:>28dB |
Diameter Tolerance | ±0.1mm | Length Tolerance | ±0.05mm |
Chamfer | 0.2mm @ 45° | Flatness | <λ/10 wave at 633nm |
Parallelism | <1 arc minutes | Perpendicularity | <5 arc minutes |
Surface Quality | 10/5 S/D per MIL-O13830A |
Basic Properties:
Chemical Formula | Tb3Ga5O12 | Crystal Structure | Cubic |
Lattice Constant | a=12.355Å | Growth Method | Czochraiski |
Density(g/cm3) | 7.13 | Hardness(mohs) | 8.0 |
Melting Point(℃) | 1725℃ | Refractive Index | 1.954 @1064nm |
Thermal Conductivity | 9.4×10-6 /K | Verdet Constant | 0.12min/Oe.cm at 1064nm |
TGG single crystal, with large Verdet constant, low optical loss, high thermal conductivity and laser-damaged threshold, is widely applied in YAG, Ti doped sapphire lasers. TGG single crystal (Terbium Gallium Garne) is an excellent magneto-optical material used in various Faraday devices (Rotator and Isolator) in the range of 400nm-1100nm. (excluding 470 - 500nm) Therefore, it is widely used in measuring devices, lasers and optical fiber system. Shalom EO provides the customized and stocked TGG substrates for magnetic and ferroelectricity film growth.