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  • TGG(Terbium Gallium Garne) Crystals and Substrates
  • TGG(Terbium Gallium Garne) Crystals and Substrates

TGG(Terbium Gallium Garne) Crystals and Substrates


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Specifications:

Material TGG(Terbium Gallium Garne) single crystal Orientations <111>±5 °
Wavefront Distortion <λ/8 wave total @633nm Extinction Ratio A:>30dB,B:>28dB
Diameter Tolerance ±0.1mm Length Tolerance ±0.05mm
Chamfer 0.2mm @ 45° Flatness <λ/10 wave at 633nm
Parallelism <1 arc minutes Perpendicularity <5 arc minutes
Surface Quality 10/5 S/D per MIL-O13830A

 

Basic Properties:

Chemical Formula Tb3Ga5O12 Crystal Structure Cubic
Lattice Constant a=12.355Å Growth Method Czochraiski
Density(g/cm3) 7.13 Hardness(mohs) 8.0
Melting Point(℃) 1725℃ Refractive Index 1.954 @1064nm
Thermal Conductivity 9.4×10-6 /K Verdet Constant 0.12min/Oe.cm at 1064nm

TGG single crystal, with large Verdet constant, low optical loss, high thermal conductivity and laser-damaged threshold, is widely applied in YAG, Ti doped sapphire lasers. TGG single crystal (Terbium Gallium Garne) is an excellent magneto-optical material used in various Faraday devices (Rotator and Isolator) in the range of 400nm-1100nm. (excluding 470 - 500nm) Therefore, it is widely used in measuring devices, lasers and optical fiber system. Shalom EO provides the customized and stocked TGG substrates for magnetic and ferroelectricity film growth.