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  • GaAs (Gallium Arsenide) Crystal and Wafers
  • GaAs (Gallium Arsenide) Crystal and Wafers

GaAs (Gallium Arsenide) Crystal and Wafers

  • Zinc blende crystal lattice structure and electron mobility 5 to 6 times greater than silicon
  • Good performance under high frequency, high and low temperature, low noise, and high radiation tolerance
  • Surface Roughness: Ra < 0.5nm
  • Clean package: class 1000 clean room and class 100 bags
  • Applications: epitaxial growth of other III-V semiconductors, microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows
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Specifications:

Orientation (100) 0°±0.5°, (100) 2°±0.5°off toward <111>A,
(100)15°±0.5°off toward <111>A 		Size(mm) 25×25×0.3, 10×10×0.35, 10×5×0.35, 5×5×0.35
Polishing SSP (single surface polished) or
DSP (double surface polished) 		Surface Roughness ≤0.5nm

 

Basic Properties:

Growth Method VGF/ HB Crystal Structure Zinc Blende
Appearance Very dark red, vitreous crystals Density 5.3176 g/cm3
Lattice Constant 5.65×10-10m Molar Mass 144.645 g•mol-1
Band Gap@300 K 1.424eV Electron Mobility @300K 8500 cm2/(V×s)
Thermal Conductivity@300K 0.55 W/(cm×K) Chemical Stability Insoluble in water, ethanol, methanol,
and acetone. Soluble in HCl.
Refractive Index 3.3

 

Single Crystal Doping Conduction Type Carrier Concentration Dislocation Density
GaAs Si No >5×1017 cm-3 <5×105 cm-2

Gallium Arsenide (GaAs) Crystal is a crystalline compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. 

The fundamental function of GaAs wafers is to be used as a substrate material for the epitaxial thin film growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide, etc. This kind of substrate has good performance under high frequencies, high temperature and low temperature, low noise, high radiation tolerance, and higher electron mobility than silicon which makes them suitable for high-frequency applications like radio frequency (RF) and microwave devices. In addition, GaAs have a direct bandgap, enabling efficient emission and absorption of light, making it ideal for optoelectronic devices like high-density p-i-n detectors and laser diodes with robust silicon electronic integrated circuits.

Hangzhou Shalom EO offers custom GaAs crystals, wafers, and substrates, which are suitable for the application of epitaxial growth, microwave, IR LED, laser diodes, solar cells, and infrared optical windows.