Substrates and Wafers for GaN Thin Film Growth
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN (Gallium Nitride) crystals and wafers is not only short-wave-length optoelectronic material, but also a well alternate material for high temperature semiconductor devices. Based on the stabile physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.
Hangzhou Shalom EO offers the custom gallium nitride wafers and substrates according to customer's request, option of N-type and semi-insulating types GaN wafers are available. Our gallium nitride crystals and wafers are widely used in various LED's, blue light laser diodes and ultra-violet (UV) laser diodes (LD), high power electronic devices and high frequency electronic devices.