Indium Phosphide (InP) Wafers and Substrates

High electron mobility, good radiation stability, and large band gap
Surface Roughness(Ra)≤5Å
For epitaxial growth of indium gallium arsenide
Superior performance in high-power and high-frequency electronics
S/Fe/Zn doping optional
Application fields: optical fiber communication, microwave, millimeter wave(MMV), radiation-resistant solar cells, Etc.

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Specifications:

Material	InP single crystal	Orientation	<100>
Size(mm)	Dia50.8×0.35mm,10×10×0.35mm 10×5×0.35mm	Surface Roughness	Ra:≤5A
Polishing	SSP (single surface polished) or DSP (double surface polished)

Chemical Properties of InP Crystal:

Single Crystal	Doping	Conduction Type	Carrier Concentration	Mobility Ratio	Dislocation Density	Standard Size
InP	/	N	(0.4-2)×10¹⁶	(3.5-4) ×10³	5×10⁴	Φ2"×0.35mm Φ3"×0.35mm
InP	S	N	(0.8-3) ×10¹⁸ (4-6) ×10¹⁸	(2.0-2.4) ×10³ (1.3-1.6) ×10³	3×10⁴ 2×10³	Φ2"×0.35mm Φ3"×0.35mm
InP	Zn	P	(0.6-2) ×10¹⁸	70-90	2×10⁴	Φ2"×0.35mm Φ3"×0.35mm
InP	Fe	N	10⁷-10⁸	≥2000	3×10⁴	Φ2"×0.35mm Φ3"×0.35mm

Basic Properties:

Crystal Structure	Tetrahedral(M4)	Lattice Constant	a = 5.869 Å
Density	4.81g/cm³	Melt Point	1062 °C
Molar Mass	145.792 g/mol	Appearance	Black cubic crystals
Chemical Stability	Slightly soluble in acids	Electron Mobility(@300K)	5400 cm²/(V·s)
Bandgap(@300 K)	1.344eV	Thermal Conductivity(@300K)	0.68 W/(cm·K)
Refractive Index	3.55(@632.8nm)

Indium Phosphide (InP) is an important III-V compound and semiconductor material with the advantages of high electron mobility, good radiation stability, and large band gap. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. InP is used as a substrate for epitaxial indium gallium arsenide-based optoelectronic devices. With stable physical and chemical properties, InP finds versatile usages in optical fiber communication, microwave, millimeter wave (MMV), radiation-resistant solar cells, and other fields.

Indium Phosphide (InP) is also utilized in high-power and high-frequency electronics (High-electron-mobility transistor, Heterojunction bipolar transistor) because of its superior electron velocities. It was used with indium gallium arsenide to make record-breaking pseudomorphic heterojunction bipolar transistors that could operate at 604 GHz.

Hangzhou Shalom EO offers Custom Indium Arsenide substrate and wafers according to the customer's request, with a good surface roughness of less than 0.5nm and packaged in class 1000 clean room and class 100 bags.