Substrates and Wafers for GaN Thin Film Growth
Lithium Aluminate (LiAlO2) single crystal is a potential substrate for III-V nitride thin films, the lattice mismatch between LiAlO2 and Gallium Nitride (GaN) is only 1.4%. LiAlO2 substrate is stable enough to stand the high-temperature reductive atmosphere. Single-oriented GaN film can be grown on LiAlO2 substrates without using low-temperature buffer layers. Hangzhou Shalom EO are able to provide LiAlO2 substrates up to 2” in diameter, with high surface roughness and clean packing.