Substrates and Wafers for GaN Thin Film Growth
Magnesium Aluminate (MgAl2O4) single crystals also known as spinel, possess a cubic crystal structure and exhibit excellent mechanical, thermal, and chemical stabilities. MgAl2O4 substrates exhibit optical transmittance over a wide spectral range, from ultraviolet to infrared wavelengths, along with low dielectric loss, making them suitable for optical and photonic applications. MgAl2O4 finds widespread usage in bulk acoustic wave and microwave devices and is an excellent substrate material for fast epitaxial growth of III-V nitrides in IC. MgAl2O4 is a substrate material with moderate cost for the growth of high-quality GaN films. MgAl2O4 is cleaved on the (100) plane, therefore GaN LD cavities can be obtained by cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO.
Hangzhou Shalom EO provides stock epi-ready MgAl2O4 wafers and custom MgAl2O4 wafers.