SGGG (Substituted GGG) Single Crystals and Wafers

Low optical losses(<0.1%/cm) and fine chemical and mechanical properties
High thermal conductivity (7.4W m-1 K-1) and High laser damage threshold (>1GW/cm2)
Maximum diameter: 4 inches; typical thickness 0.5/1.0mm
Clean package: class 1000 clean room and class 100 bags
Typical orientation of SGGG substrates: ＜111＞
Applications: liquid phase epitaxy (LPE), magneto-optical film, YIG& BIG film epitaxial growth

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Specifications:

Material	SGGG single crystals	Orientation	＜111＞
Orientation Error	±0.2°	Maximum Diameter	4 inches
Typical Thickness	0.5mm, 1.0mm	Thickness Tolerance	±0.05mm
Size Tolerance	±0.1mm	Surface Finish	SSP or DSP
Roughness	≤1nm	Cleanness and Package	class 1000 clean room, class 100 bags

Material Properties:

Material	SGGG	Chemical Formula	/
Lattice Constant	12.497Å	Growth Method	Czochralski
Density	7.09g/cm³	Mohs Hardness	7.5
Melting Point	1730℃	Refractive Index	1.954@1064nm

GGG, SGGG, and NGG Garnets are used as substrates for liquid phase epitaxy (LPE). GGG substrates are substrates oriented for growing magneto-optical film. GGG substrates are often used to grow the YIG or BIG film placed in a magnetic field, which is an indispensable part of an infrared isolator operating within the 1.3-1.5μm range utilized for optical communication. GGG single crystal substrates of different tangential can achieve the best lattice match with the magneto-optical material, thus ensuring the YIG and BIG film epitaxial growth is successful. SGGG Single-crystal is excellent for growing bismuth-substituted iron garnet epitaxial films.