Substrates and Wafers for Magnetic and Ferroelectric Film Growth
LaAlO3 (Lanthanum aluminate) single crystal has a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high temperature superconductors (HTS), magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Hangzhou Shalom EO not only provides the stocked standard epi-ready LaAlO3 wafers, but also the custom type wafers upon request.