Wafers for Semiconductor Film Growth

Wafers of Si, Ge, GaAs, InP, InAs, SiC and GaSb are offers, EPI ready.

Gallium Arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band.....

The lattice constant of GaSb matches well with each ternary, quaternary and III-V compound solid sol.....

Pure germanium is a semiconductor. Germanium can be doped with 5-valent elements such as phosphorus,.....

InAs single crystal is widely used as the substrate material for heterojunction materials (InAsSb/In.....

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-ce.....

Single Crystal Silicon for solar energy applications includes p-type and n-type silicon. Ultra high .....

SiC is a semiconductor containing silicon and carbon. Sic (Silicon Carbide) has thermal conductivity.....

ZnO has the potential to become the substrate material of choice for GaN. Like GaN, it has a wurtzit.....

The Cd0.96Zn0.04Te (CZT) is the preferred material using as a substrate, mainly due to its similar l.....