Gallium Antimonide (GaSb) Crystals and Substrates

Matches well with each ternary, quaternary, and III-V compound
Maximum diameter: 3 inches
Non-doping, Zn-doped, and Te-doped GaSb are available.
Surface Roughness: Ra≤0.5nm
Clean package: class 1000 clean room and class 100 bags
Applications: Infrared optical fiber transmission, potential application in the microwave field

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Specifications:

Material	GaSb single crystal	Orientation	<100>
Crystal Structure	Cube	Density	5.53g/cm³
Melt Point	712℃	Bandgap(@300 K)	0.67eV
Size(mm)	10x10x0.5mm, 5x5x0.5mm, D50.8x0.5mm, D76.2x0.5mm	Surface Roughness	Ra≤0.5nm
Polishing	SSP (single surface polished) or DSP (double surface polished)	Package	class 1000 clean room, class 100 bags

Chemical Properties of GaSb Crystal:

Single Crystal	Doping	Conduction Type	Carrier Concentration	Mobility Ratio	Dislocation Density
GaSb	/	P	(1-2)×10¹⁷	600-700	<1x10⁴
GaSb	Zn	P	(5-100)x10¹⁷	200-500	<1x10⁴
GaSb	Te	N	(1-20)x10¹⁷	2000-3500	<1x10⁴

Gallium Antimonide (GaAs) is used as a substrate material for the epitaxial growth of heterostructures, which are harnessed for optoelectronic applications. The lattice constant of GaSb matches well with various ternary, quaternary, and III-V compound solid solutions whose bandgap covers 0.8–4.3 μm, which makes it a good substrate material used in infrared optical fiber transmission. With higher lattice-restricted mobility than GaAs, GaSb is expected to have good prospects in the field of microwave.

Hangzhou Shalom EO offers custom GaSb crystals and substrates according to the customer’s request, the maximum diameter of 3” is available. Three types of GaSb materials: non-doping, Zinc (Zn) doped and Tellurium (Te) doped GaSb are offered. All substrates are stringently tested and packed in class 1000 clean room and class 100 bags.