Substrates and Wafers for Semiconductor Film Growth
Germanium (Ge) is a rare metal and semiconductor material and contains many unique properties and merits. The benefits of Ge include strong chemical resistance, easy processing, high and uniform transmittance, large refractive index, high radiation resistance, and good photoelectric performance. Germanium or Ge substrates are interesting alternatives for epitaxial growth and layer transfer of III-V compounds, because of the closely-matching thermal and similar lattice constants, germanium substrates can be used to make gallium arsenide solar cells.
Germanium substrates are excellent for manufacturing semiconductors, infrared optics, and solar cells. Germanium has a higher intrinsic carrier concentration compared to silicon, making it useful for applications requiring high speed. Germanium is less expensive and more mechanically strong than GaAs, therefore Ge substrates can have a larger length-to-thickness ratio, reducing the weight and cost.
Hangzhou Shalom EO provides germanium crystals, wafers, and substrates that are precisely "off-cut" towards the appropriate directions and packaged in class 1000 clean room and class 100 bags.