$365.00
Specifications:
| Crystal Materials | LiNbO3 crystals | Size | 9x9x25mm (Rectangular) |
| Size Tolerance | +/-0.1mm | Length Tolerance | +/-0.2mm |
| Surface Quality | 20/10 S/D | Parallelism | <20 arc seconds |
| Flatness | < Lambda/10 @633nm | Chamfer | 0.1-0.3mmx45° |
| Chips | <0.15mm | Side Surface | Fine ground |
| Orientation Tolerance | < 10 arc minutes | Wavefront Distortion | <Lambda/4@633nm |
| Extinction Ratio | >200:1 | Coating | AR/AR@1064nm or customized |
| Damaging Threshold | >100mW/cm^2@1064nm 10nS 10Hz pulse | Electrode on Side Surface | Chrome gold electrode (Cr+Au) |
Note: crystals with other special specificaton is available upon request
LiNbO3 crystals have become one of the most commonly used material for Q-switches and phase modulators for its high EO coefficients, with an electric field applied transverse to the direction of light propagation, LiNBO3 cells can be configured to operate at a lower voltage than comparable KD*P cells. LiNbO3 can also be a good choice for infrared wavelengths as long as 3.0µm. Hangzhou Shalom EO offers the polished, and AR coating and Au-Cr electroded LiNbO3 crystals used in pockels cells.
Preferably for Er:YAG-, Ho:YAG-, Tm:YAG laser
Wavelengths up to 3μm
Brewster for laser with low amplification
LiNbO3 crystals with bruster angle:
