LaAlO3 Substrates

Maximum diameter: 3 inches, typical thickness 0.5/1.0mm
Orientation of LaAlO3 substrates: ＜100＞,＜110＞,＜111＞
Surface Roughness: Ra < 0.5nm
Clean package: class 1000 clean room, class 100 bags
Applications: epitaxial growth of high temperature superconductors (HTS), magnetic and ferroelectric thin films, low loss microwave and dielectric resonance applications

Code	Size	Thickness	Orientation	Surface Finish	Unit Price	Delivery
645-001	5x5mm	0.5mm	<100>	SSP	Inquire	2 weeks
645-002	5x5mm	0.5mm	<100>	DSP	Inquire	2 weeks
645-004	5x5mm	0.5mm	<111>	SSP	Inquire	2 weeks
645-005	10x10mm	0.5mm	<100>	SSP	Inquire	2 weeks
645-006	10x10mm	0.5mm	<100>	DSP	Inquire	2 weeks
645-007	10x10mm	0.5mm	<110>	SSP	Inquire	2 weeks
645-008	10x10mm	0.5mm	<111>	SSP	Inquire	2 weeks
645-009	φ25.4mm	0.5mm	<100>	SSP	Inquire	2 weeks
645-010	φ25.4mm	0.5mm	<100>	DSP	Inquire	2 weeks
645-011	Φ50.8mm	0.5mm	<100>	SSP	Inquire	2 weeks
645-012	Φ50.8mm	0.5mm	<100>	DSP	Inquire	2 weeks
645-013	Φ76.2mm	0.5mm	<100>	SSP	Inquire	Inquire
645-014	Φ76.2mm	0.5mm	<100>	DSP	Inquire	Inquire

LaAlO3 (Lanthanum aluminate) single crystal with a perovskite crystal structure, has a good lattice match to multiple materials with a similar perovskite structure. Its wide bandgap, thermal stabilities, and low dielectric loss make it excellent for applications in electronics of high frequencies, optics, and indispensable platforms for the epitaxial growth and research of thin films and heterostructures. Various materials can be grown on LaAlO2, including complex oxides, high-temperature superconductors, magnetic materials, and multiferroics. LaAlO3 exhibits a high dielectric constant, making it useful in capacitor applications.

Hangzhou Shalom EO provides stock epi-ready LaAlO3 wafers and custom LaAlO3 wafers upon request.

Applications of LaAlO3 Substrates:

Epitaxial Growth: LaAlO3 substrates serve as templates for the epitaxial growth of complex oxide thin films, including high-temperature superconductors, magnetic materials, and multiferroics. The lattice match between LaAlO3 and the deposited material enables the precise control of film quality and interface properties.
Electronics: In electronics, LaAlO3 substrates find applications in the fabrication of high-performance field-effect transistors (FETs), resistive random-access memory (RRAM), and photonic devices. The compatibility of LaAlO3 with various deposition techniques allows for the integration of diverse functional materials and device architectures.
Optoelectronics: LaAlO3 substrates play a crucial role in the development of optoelectronic devices such as light-emitting diodes (LEDs), photodetectors, and electro-optic modulators. The transparent nature of LaAlO3 in the visible and near-infrared spectrum makes it suitable for optical applications.
Fuel Cells and Sensors: LaAlO3-based thin films are investigated for applications in solid oxide fuel cells (SOFCs), gas sensors, and catalysis. The high chemical stability and ionic conductivity of LaAlO3 facilitate efficient ion transport and electrode performance.

Common Specifications:

Material	LaAlO3 crystals	Orientation	＜100＞,＜110＞,＜111＞
Orientation Error	±0.5°	Maximum Diameter	3 inches
Typical Thickness	0.5mm, 1.0mm	Thickness Tolerance	±0.05mm
Size Tolerance	±0.1mm	Surface Finish	SSP or DSP
Roughness	Ra<0.5nm	Cleanness and Package	class 1000 clean room, class 100 bags

Curves:

1）Typical X-Ray Diffraction (XRD) Curve of LaAlO3 <100> Crystals Substrates

2) Typical Surface Roughness of substrate LaAlO3 <100> and <001> measured by Atomic Force Microscope (AFM) in 5μm x 5μm Scale

LaAlO3 Substrates

LaAlO3 Wafers 5x5x0.5mm <100> DSP

LaAlO3 Wafers φ50.8x0.5mm <100> DSP

LaAlO3 Wafers 10x10x0.5mm <110> SSP