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| GaN Substrates |
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN (Gallium Nitride) crystals and wafers is not only short-wave-length optoelectronic material, but also a well alternate material for high temperature semiconductor devices. Based on the stabile physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.
Hangzhou Shalom EO offers the custom gallium nitride wafers and substrates according to customer's request, option of N-type and semi-insulating types GaN wafers are available. Our gallium nitride crystals and wafers are widely used in various LED's, blue light laser diodes and ultra-violet (UV) laser diodes (LD), high power electronic devices and high frequency electronic devices.
