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  • Aperture 1.8mm double-crystal BBO Pockels Cells
  • Aperture 1.8mm double-crystal BBO Pockels Cells

Aperture 1.8mm double-crystal BBO Pockels Cells


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Clear Aperture 1.8mm
Wavelength 410-3500nm
Dimension Ф25.4×67mm
Extinction Ratio@1064nm >500:1
Connectors Pin connectors (gold plated)
Insertion loss <3%
Crystal size 2x2x20mm
Quarter Wave Voltage ~1200V
Capacitance <4pF
Damaging Threshold >500MW/cm^2@1064nm,10ns,10Hz Homogeneous intracavity laser light beam with no hot point

This module of BBO pockels cells has double-crystal structure (double crystal structure means the applied voltage is 50 percent lower than that would otherwise be with single crystal structure; however the extinction ratio halves consequently), and the end faces are capsulated using ceramic material.

Hangzhou Shalom EO offers the off-the-shelf and custom BBO Pockels Cells with high damage threshold, low insertion loss, high extinction ratio, minimal piezoelectric ringing and competitive price. BBO Pockels Cells with both Single and double BBO crystal design and low -voltage geometry are available upon requests. 

Features of BBO crystal

  • Ultra-thin crystals can be used for ultra-fast (<10 fs) applications
  • Wide phase matching range of various second-order nonlinear interactions in almost the entire transparent range
  • The highest nonlinearity among all UV nonlinear crystals
  • High laser induced damage threshold (LIDT)
  • Wide transmittance range from 188 nm to 5.2μm (appropriate transparency @3μm-5.2μm, tens of μm thick crystal)
  • Extremely low capacitance (1< pF) will permit high repetition rate switching with rise times on the order of 100 ps or less
  • High damage threshold capable of withstanding high peak power intensities of samller beam size and therefore suitable for compact design ( However, small crystal aperture leads to diffraction losses and hence might increase the insertion losses.)
  • Not prone to piezo-electric ringing
  • Low absorption and associated laser-induced thermal birefringence
  • High extinction ratio


  1. High repetition rate DPSS Q-switches
  2. High repetition rate regenerative amplifier control
  3. Cavity dumping and Beam chopper
  4. Low dispersion suitable for short pulse regenerative amplifiers