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LSAT Wafers 10x10x0.5mm <111> SSP

Code: 643-008

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Material LSAT crystals Orientation <111>
Orientation Error ±0.5° Size 10.0(±0.1)x10.0(±0.1)mm
Thickness 0.5(±0.05)mm Surface Finish SSP
Roughness Ra<0.5nm Cleaness and Package 1000 grade clean room, 100 grade bags

Basic Properties:

Growth Method Czochralski method Crystal Structure M3
Unit Cell Constant a=3.868 Å Melt Point(℃) 1840
Density 6.74(g/cm3 Hardness 6.5(mohs)
Dielectric Constants 22 Thermal Expansion 10 x 10-6 /K

LSAT - Lanthanum Strontium Aluminum Tantalum Oxide or (La,Sr)(Al,Ta)O3 is a mixed perovskite structure crystals, LSAT substrates is often used  for epitaxial thin film growth in ferroelectric and high temperature superconductor (HTS) devices. LSAT is a hard, optically transparent oxide of the elements lanthanum, aluminum, strontium and tantalum, LSAT wafers are popular for epitaxial oxides and their heterostructures, often in the study of electron correlation phenomena. Typical materials grown on LSAT substrates include strontium titanate (SrTiO3), cuprate superconductors (such as YBCO), iron-based superconductors (iron-pnictides), rare-earth manganites, rare-earth nickelates and others. Semiconductors such as gallium nitride can also be grown on LSAT. 

Hangzhou Shalom EO provides both stocked standard LSAT wafers and custom type wafers.

2 weeks