| Transmitting Wavefront Distortion | less than λ/4 @ 633nm | Clear Aperture | >90% central area |
| Chamfer | ≤0.2mm@45degree | Chip | ≤0.1mm |
| Flatness | λ/8 @ 633 nm | Surface Quality | 10/5 S/D |
| Parallelism | better than 10 arc seconds | Perpendicularity | ≤5 arc minutes |
| Angle Tolerance | ≤0.5° | Quality Warranty Period | one year under proper use |
| Typical Coating | AR@1064nm&HT@808nm, HR@1064nm&HT@808nm | Damage Threshold | 700MW/cm^2@1064nm, 10Hz, 10ns |
Physical and Optical Properties:
| Atomic Density | 1.26x1020 atoms /cm3 (Nd1.0%) | Crystal Structure | Zircon Tetragonal, space group D4h-I4/amd a=b=7.1193A,c=6.2892A |
| Density | 4.22g/cm3 | Mohs Hardness | 4-5(Glass-like) |
| Thermal Expansion Coefficient (300K) | αa=4.43x10-6 /K αc=11.37x10-6 /K |
Thermal Conductivity | 5.2W/m/K(@25℃) |
| Laser Wavelength | 1064nm,1342nm | Thermal Optical Coefficient (300K) | dno/dT=8.5×10-6 /K dne/dT=2.9×10-6 /K |
| Stimulated Emission Cross-section | 25×10-19cm2 @ 1064nm | Pump Wavelength | 808nm |
| Chemical Formula | Nd:YVO4 | Fluorescent Lifetime | 90μs(1% Nd doping) |
| Absorption Coefficient | 31.4cm-1@810nm | Intrinsic Loss | 0.02cm-1@1064nm |
| Gain Bandwidth | 0.96nm@1064nm | Polarized Laser Emission | π polarization; parallel to optic axis(c-axis) |
| Diode Pumped Optical to Optical Efficiency | >60% | Sellemeier equations (λ in μm) | n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2 |
The Laser Properties of Nd:YVO4:
1. Nd: YVO4 stands out for its appealing attributes, when compared to Nd: YAG. it exhibits a fivefold increase in absorption coefficient across a broader bandwidth around the 808 nm peak pump wavelength, aligning seamlessly with the standards of high-power laser diodes. This characteristic permits the use of a smaller Nd:YVO4 crystal in laser systems, resulting in a more compact design. The implications extend to lower operating power levels for the laser diode, thereby enhancing its lifespan. With an absorption bandwidth ranging from 2.4 to 6.3 times that of Nd:YAG, Nd: YVO4 facilitates more efficient pumping, and also offers a wider selection range for diode specifications, providing laser manufacturers with valuable options for greater tolerance and cost-effectiveness.
2. Nd:YVO4 crystal boasts larger stimulated emission cross-sections at both 1064nm and 1342nm. In the case of an a-axis cut Nd:YVO4 crystal lasing at 1064nm, the cross-section is four times greater than that of Nd:YAG. Moreover, at 1340nm, the stimulated cross-section skyrockets to 18 times larger, enabling continuous wave (CW) operation that outperforms Nd:YAG at 1320nm. These characteristics contribute to the Nd:YVO4 laser's ability to maintain robust single-line emission at these two wavelengths.
3. Another notable feature of Nd:YVO4 lasers is their uniaxial nature, distinct from the high symmetrical cubic structure of Nd:YAG. This results in light emission of linear polarization, mitigating undesired birefringent effects during frequency conversion. Despite having a shorter lifetime than Nd:YAG, approximately 2.7 times shorter, Nd:YVO4 can achieve high slope efficiency through thoughtful laser cavity design, owing to its elevated pump quantum efficiency.
The major laser properties of Nd:YVO4 vs Nd:YAG are listed in the table below, including stimulated emission cross-sections (σ), Absorption Coefficient (α) Fluorescent lifetime (τ), Absorption Length (La), threshold Power (Pth), and Pump Quantum Efficiency (ηs).
Laser Properties of Nd:YVO4 vs Nd:YAG
| Laser Crystal | Doping (atm%) | σ (x10-19cm2) |
α (cm-1) |
τ (μs) |
Lα (mm) |
Pth (mW) |
ηs (%) |
| Nd:YVO4(a-cut) | 1.0 2.0 |
25 25 |
31.2 72.4 |
90 50 |
0.32 0.14 |
30 78 |
52 48.6 |
| Nd:YVO4(c-cut) | 1.1 | 7 | 9.2 | 90 | 231 | 45.5 | |
| Nd:YAG | 0.85 | 6 | 7.1 | 230 | 1.41 | 115 | 38.6 |
Typical Results of Nd:YVO4
Diode pumped Nd:YVO4 laser output compared with diode pumped Nd:YAG laser.
| Crystals | Size (mm3) | Pump Power | Output (at 1064nm) |
| Nd:YVO4 | 3x3x1 | 850mW | 350mW |
| Nd:YVO4 | 3x3x5 | 15W | 6W |
| Nd:YAG | 3x3x2 | 850mW | 34mW |
Neodymium-doped Gadolinium Vanadate or Nd: YVO4 crystal is one of the most efficient laser host crystals among the current commercial laser crystals for DPSS lasers, in particular, low to middle power diode pumping attributing to its absorption and emission features surpassing Nd:YAG. Nd:YVO4 crystals are often utilized in combination with high-coefficient NLO crystals (such as LBO, BBO, KTP) to convert the wavelengths of laser output from infrared to green, blue, and ultra-violet. Its large stimulated emission cross-section at the lasing wavelength, high absorption coefficient, and wide absorption bandwidth at the pump wavelength all contribute to its excellence. Whilst Nd:YVO4 also boasts a high damage threshold as well as exceptional physical, optical, and mechanical properties.
Nd:YVO4 finds versatile utility in laser processing, spectroscopes, wafer inspection, light shows, medical diagnostics, laser printing, and data storage, etc. Nd:YVO4-based diode-pumped solid-state lasers are gaining ground in markets that were dominated by water-cooled ion lasers and lamp-pumped lasers. This trend is evident when there is a demand for a compact design and single-longitudinal-mode output.
Hangzhou Shalom EO offers the Nd: YVO4 Crystals with an Nd doping range of 0.1%-3% and with a maximum size of Dia20x20mm.
Application Notes:
Nd:YVO4’s advantages over Nd: YAG
With an absorption efficiencies five times greater across a broad pumping bandwidth centered around 808nm, the reliance on pumping wavelength diminishes, favoring a pronounced inclination towards single-mode output.
The emission cross-section at the lasing wavelength of 1064nm is three times larger
Lower lasing thresholds and enhanced slope efficiencies
As a uniaxial crystal with substantial birefringence, Nd:YVO4 crystals ensure linear polarization of the emitted light
Laser Crystal Comparison Chart:
