Ti:Sapphire Crystals

Excellent thermal conductivity
Larger gain bandwidth
Large laser emission cross-section
Excellent for tunable lasers and ultra-fast pulsed lasers

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Specifications:

Orientation	Optical axis C normal to rod axis	Ti2O3 Concentration	0.06 - 0.26atm %
Figure Of Merit(FOM)	100~200	α490	1.0-4.0cm^-1
Diameter	2-30mm or specified	Path Length	2-30mm or specified
End Configurations	Flat/Flat or Brewster/Brewster ends	Flatness	<λ/10 @ 633nm
Parallelism	<10 arc sec	Surface Finishing	<20/10 scratch/dig per MIL-PRF-13830B
Wavefront Distortion	<λ/4 per inch

Physical and Optical Properties:

Chemical Formula	Ti³⁺: Al2O3	Crystal Structure	Hexagonal
Lattice Constants	a=4.758, c=12.991	Density	3.98 g/cm³
Melting Point	2040℃	Mohs Hardness	9
Thermal Conductivity	52 W/m/k	Laser Wavelength	600-1050nm
Thermal Expansion Coefficient	5x10-6XK-1

Titanium-doped Sapphire (Ti:Sapphire) is one of the most prevalent laser crystals for tunable and ultrashort pulsed lasers with high gain and high power outputs. Ti:Sapphire crystals of Shalom EO are grown by the method of Temperature Gradient Technique (TGT), large-size (Dia.30x 30mm) Ti:Sapphire crystal absent of light scatter, with the dislocation density less than 10²cm^-2 could be provided. The TGT-grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (a490= 4.0cm^-1), high gain, and exceptional laser damage threshold.

Application Notes:

The tunable wavelengths that cover a broad range from 700 to 1000nm make Ti:Sapphire an excellent substitute for dye lasers in many applications.
Frequency-doubled by NLO crystals such as ultra-thin BBO, Ti:Sapphire can be used to generate UV and DUV (up to 193nm) laser with ultrafast pulses with pulse durations less than 10fs.
Ti:Sapphire is also used as the pumping source of Optical Parametric Oscillation (OPO) to expand the tunable range.

Laser Crystal Comparison Chart:

laser crystal comparison