Specifications:
Note: Shalom EO offers substrates made from two different models (BEO99 and BEO99.5) of BeO Ceramics. The specifications of the two models are separately listed in the table below.
| Parameters/Models | BEO99 | BEO99.5 | |
| Volume Density | ≥2.85g/cm3 | ≥2.88g/cm3 | |
| Flexural Strength | ≥200Mpa | ≥200Mpa | |
| Average Coefficient of Expansion (at 25-500°C) | 7.0-8.0x10-6/K | 7.0-8.0x10-6/K | |
| Thermal Conductivity | at 25°C | ≥260W/m.K | ≥285W/m.K |
| at 100°C | ≥190W/m.K | 200W/m.K | |
| Dielectric Constants | at 1MHz | 6.7±0.2 | |
| at 10GHz | 6.9±0.2 | 6.8±0.2 | |
| Dielectric Loss Tangent | at 1MHz | ≤4x10-4 | ≤4x10-4 |
| at 10±0.5GHz | ≤6x10-4 | ≤4x10-4 | |
| Volume Resistivity | ≥1014 Ω.cm (at 20 °C) | ≥1014 Ω.cm (at 100 °C) | |
| Puncture Strength | ≥30kV/mm | ≥40kV/mm | |
| Thermal Shock Resistance | Excellent | Excellent | |
| Chemical Stability | 1:9 HCL | ≤0.1mg/cm2 | ≤0.1mg/cm2 |
| 10% NaOH | ≤0.1mg/cm2 | ≤0.1mg/cm2 | |
| Air Tightness | ≤5x10-12Pa.m3/s | ≤5x10-12Pa.m3/s | |
| Average Grain Size | 10-20μm | 10-20μm | |
Thick Film Metalized ceramic substrates, are ceramic substrates screened with conductor, resistor, resistor metal pastes, and fired. The structures and compositions of the thick film ceramic substrates are engineered to achieve certain functions. In contrast with thin film metalization, the thick film metalization technique is advantageous in terms of churning out large volumes with high efficiencies and is more appropriate for circuits requiring less strict precision control.
Beryllium Oxide (Beryllia/BeO) Ceramics are a kind of high-performance fine ceramic material with unparalleled thermal induction properties. Shalom EO’s Thick Film Metalized BeO Ceramic Substrates are manufactured using thick-film WMn/MoMn metallization with nickel electroplating, delivering great bonding force, high weldabilities, and excellent tensile strength (>20MPA). During the thick film treatment W and Mn, or Mo and Mn coating with activators are printed using silk-screen on bare BeO ceramics, and then fired at high temperatures above 800℃. The metal film could cover the whole side or be distributed in patterns corresponding to the circuits. The thick film metalized ceramic substrates feature high ruggedness and minimized possibilities of outgassing. The nickel platings do not blister.
For the circuit-pattern-distributed versions, Shalom EO is capable of retaining the dimensional tolerances of the lines within 0.02mm. High-precision laser-cut ceramic substrates are also available in Shalom EO, where tight geometric monitoring could be realized through a series of laser-processing techniques, including laser-cutting, laser-drilling, laser-marking, etc. Our Thick Film Metalized Beryllium Oxide ceramic substrates are excellent platforms for wire bonding, ideal preforms of microwave PCBs, TEC for lasers, HIC for automotive, high-power semiconductor modules, and hermetic electrical packaging.
Application Notes:
It's worth noting that although Beryllium Oxide ceramics have been notorious, for being deemed to be toxic, it’s the soluble BeO power that’s toxic. Beryllium Oxide ceramics, however, having gone through high-temperature processing, are insoluble in common acids and alkalis, therefore are not as detrimental as believed under proper protection measures. Shalom EO's Beryllium Oxide ceramic substrates are all produced and tested in compliance with pertinent regulations.
