click me!

MgAl2O4 Substrates

Features:

  • Maximum Diameter: 2 inches
  • Custom wafers available upon request

Inquire for custom product  
Code Size Thickness Orientation Surface Finish Unit Price Delivery Cart
644-001 5x5mm 0.5mm <100> SSP Inquire 2 weeks
644-002 5x5mm 0.5mm <100> DSP Inquire 2 weeks
644-003 5x5mm 0.5mm <110> SSP Inquire 2 weeks
644-004 5x5mm 0.5mm <111> SSP Inquire 2 weeks
644-005 10x10mm 0.5mm <100> SSP Inquire 2 weeks
644-006 10x10mm 0.5mm <100> DSP Inquire 2 weeks
644-007 10x10mm 0.5mm <110> SSP Inquire 2 weeks
644-008 10x10mm 0.5mm <111> SSP Inquire 2 weeks
644-009 Φ12.7mm 0.5mm <100> SSP Inquire 2 weeks
644-010 Φ12.7mm 0.5mm <100> DSP Inquire 2 weeks
644-011 Φ25.4mm 0.5mm <100> SSP Inquire 2 weeks
644-012 Φ25.4mm 0.5mm <100> DSP Inquire 2 weeks
644-013 Φ50.8mm 0.5mm <100> SSP Inquire Inquire
644-014 Φ50.8mm 0.5mm <100> DSP Inquire Inquire

Magnesium Aluminate (MgAl2O4 or spinel) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate. The crystallographic structure of MgAl2O4 is a spinel type (Fd3m), and its lattice constant is 8.083 A. MgAl2O4 is a relatively low-cost substrate material, which has been successfully applied to the growth of high quality GaN films. MgAl2O4 is cleaved on the (100) plane. GaN LD cavities have been obtained by simply cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.

Hangzhou Shalom EO provides both stocked standard MgAl2O4 wafers and customs type wafers.

Common Specifications:

Material MgAl2O4 crystals Orientation <100>,<110>,<111>
Orientation Error ±0.5° Maximum Diameter 20mm
Typical Thickness 0.5mm, 1.0mm Thickness Tolerance ±0.05mm
Size Tolerance ±0.1mm Surface Finish SSP or DSP
Roughness Ra<0.5nm Cleaness and Package 1000 grade clean room, 100 grade bags

Physical Properties:

Crystal Structure Cubic: a = 8.083 Å Growth Method Czochralski
Density 3.64 g/cm3 Melt Point 2130℃
Hardness 8.0 (Mohns) Thermal Expansion 7.45 (x10-6/℃)
Phase Velocity 6500 m/s at (100> shear wave) Propagation Loss 6.5 dB/ms
Typical Growth Direction <100> and <110> Color Colorless
Dielectric Constant 8-9
MgAl2O4 Wafers Φ25.4mmx0.5mm <100> DSP

MgAl2O4 Wafers Φ25.4mmx0.5mm <100> DSP

MgAl2O4 Wafers 10x10x0.5mm <100> SSP

MgAl2O4 Wafers 10x10x0.5mm <100> SSP

MgAl2O4 Wafers Φ50.8mmx0.5mm <100> DSP

MgAl2O4 Wafers Φ50.8mmx0.5mm <100> DSP