MgAl2O4 Substrates

Stocked and custom MaAl2O4 (or Spinel) Substrates available
Maximum diameter: 2 inches, typical thickness 0.5/1.0mm
Surface Roughness: Ra < 0.5nm
Clean package: 1000-grade clean room and 100-grade bags
Orientation of MgAl2O4 substrates:＜100＞,＜110＞,＜111＞
Applications: epitaxial thin film growth in ferroelectric and high-temperature superconductor (HTS) devices, growth of high-quality GaN films, III-V nitrides device, bulk acoustic wave, and microwave devices

Code	Size	Thickness	Orientation	Surface Finish	Unit Price	Delivery
644-001	5x5mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-002	5x5mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-003	5x5mm	0.5mm	<110>	SSP	Inquire	2 weeks
644-004	5x5mm	0.5mm	<111>	SSP	Inquire	2 weeks
644-005	10x10mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-006	10x10mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-007	10x10mm	0.5mm	<110>	SSP	Inquire	2 weeks
644-008	10x10mm	0.5mm	<111>	SSP	Inquire	2 weeks
644-009	Φ12.7mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-010	Φ12.7mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-011	Φ25.4mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-012	Φ25.4mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-013	Φ50.8mm	0.5mm	<100>	SSP	Inquire	Inquire
644-014	Φ50.8mm	0.5mm	<100>	DSP	Inquire	Inquire

Magnesium Aluminate (MgAl2O4) single crystals, also known as spinels, possess a cubic crystal structure and exhibit excellent mechanical, thermal, and chemical stabilities. MgAl2O4 substrates exhibit optical transmittance over a wide spectral range, from UV to IR, along with low dielectric loss, making them suitable for optical and photonic applications. MgAl2O4 finds widespread usage in bulk acoustic wave and microwave devices and is an excellent substrate material for fast epitaxial growth of III-V nitrides in IC with moderate cost. MgAl2O4 is cleaved on the (100) plane, therefore GaN LD cavities can be obtained by cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO.

Hangzhou Shalom EO provides stock epi-ready MgAl2O4 wafers and custom MgAl2O4 wafers.

Common Specifications:

Material	MgAl2O4 crystals	Orientation	＜100＞,＜110＞,＜111＞
Orientation Error	±0.5°	Maximum Diameter	20mm
Typical Thickness	0.5mm, 1.0mm	Thickness Tolerance	±0.05mm
Size Tolerance	±0.1mm	Surface Finish	SSP or DSP
Roughness	Ra<0.5nm	Cleaness and Package	1000 grade clean room, 100 grade bags

Physical Properties:

Crystal Structure	Cubic: a = 8.083 Å	Growth Method	Czochralski
Density	3.64 g/cm³	Melt Point	2130℃
Hardness	8.0 (Mohns)	Thermal Expansion	7.45 (x10^-6/℃)
Phase Velocity	6500 m/s at (100> shear wave)	Propagation Loss	6.5 dB/ms
Typical Growth Direction	<100> and <110>	Color	Colorless
Dielectric Constant	8-9

MgAl2O4 Substrates

MgAl2O4 Wafers 10x10x0.5mm <110> SSP

MgAl2O4 Wafers 10x10x0.5mm <100> SSP

MgAl2O4 Wafers Φ25.4mmx0.5mm <100> SSP