Code | Size | Thickness | Orientation | Surface Finish | Unit Price | Delivery | Cart |
---|---|---|---|---|---|---|---|
6505-001 | 10x10mm | 0.5mm | C-plane | SSP | Inquire | 2 weeks | |
6505-002 | 10x10mm | 0.5mm | C-plane | DSP | Inquire | 2 weeks | |
6505-003 | Φ12.7mm | 0.5mm | C-plane | SSP | Inquire | 2 weeks | |
6505-004 | Φ12.7mm | 0.5mm | C-plane | DSP | Inquire | 2 weeks | |
6505-005 | Φ25.4mm | 0.5mm | C-plane | SSP | Inquire | 2 weeks | |
6505-006 | Φ25.4mm | 0.5mm | C-plane | DSP | Inquire | 2 weeks | |
6505-007 | φ50.8mm | 0.43mm | C-plane | SSP | Inquire | 2 weeks | |
6505-008 | φ50.8mm | 0.4mm | C-plane | DSP | Inquire | 2 weeks | |
6505-009 | φ100mm | 0.65mm | C-plane | SSP | Inquire | 2 weeks | |
6505-010 | φ100mm | 0.5mm | C-plane | DSP | Inquire | 2 weeks | |
6505-011 | φ150mm | 1.0mm | C-plane | SSP | Inquire | 2 weeks | |
6505-012 | φ150mm | 1.0mm | C-plane | DSP | Inquire | 2 weeks |
Al2O3 crystals or Sapphire is a multi-function crystal materials with excellent properties: good thermos-stability, high thermal conductivity, high hardness, high transmission at infrared wavelength rang and excellent chemical stability. Sapphire is widely used in industrial, defense and security and scientific research fields. sapphire is also an important substrate materials for high temperature superconductivity applications, it can be used for film growth of Y-series, La-series, and it is also used to grow the superconductivity film of MgB2.
Hangzhou Shalom EO provides both stocked standard sapphire wafers and customs type wafers.
Common Specifications:
Materials | Al2O3 crystals or sapphire | Orientation Error | ±0.5deg. |
Orientation | A-plane | <11-20> | 2.379Å |
R-plane | <1-102> | 1.740Å | |
M-plane | <10-10> | 1.375Å | |
C-plane | <0001> | 2.165Å | |
Maximum Diameter | 6 inches | Surface Finish | SSP (single surface polished) or DSP (double surface polished) |
Basic Properties:
Crystal Structure | Hexagonal | Unit Cell Constant | a=4.748Å c=12.97Å |
Melt Point(℃) | 2040℃ | Crystal Purity | 99.99% |
Density | 3.98 (g/cm3) | Hardness | 9(mohs) |
Thermal Expansion(/℃) | 7.5 x10-6 | Dielectric Constants | ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis |
Thermal Conductivity(Calorie/℃ Cm.S) | ⊥c | //c | |
23℃ | 0.055 | 26℃ 0.060 | |
77℃ | 0.040 | 70℃ 0.041 |
Curves:
1)Typical X-Ray Diffraction (XRD) Curve of Sapphire (Al2O3) Crystals Substrates
2) Typical Surface Roughness of Sapphire (Al2O3) substrate <0001> measured by Atomic Force Microscope (AFM) in 5μm x 5μm Scale