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Home > Wafers and Substrates > Substrates and Wafers for Magnetic and Ferroelectric Film Growth > Sapphire (Al2O3) Substrates and Wafers

Sapphire (Al2O3) Substrates and Wafers

      • Maximum diameter: 6 inches
      • Custom wafers available upon request
      Inquire for custom product  
      Code Size Thickness Orientation Surface Finish Unit Price Delivery Cart
      6505-001 10x10mm 0.5mm C-plane SSP Inquire 2 weeks
      6505-002 10x10mm 0.5mm C-plane DSP Inquire 2 weeks
      6505-003 Φ12.7mm 0.5mm C-plane SSP Inquire 2 weeks
      6505-004 Φ12.7mm 0.5mm C-plane DSP Inquire 2 weeks
      6505-005 Φ25.4mm 0.5mm C-plane SSP Inquire 2 weeks
      6505-006 Φ25.4mm 0.5mm C-plane DSP Inquire 2 weeks
      6505-007 φ50.8mm 0.43mm C-plane SSP Inquire 2 weeks
      6505-008 φ50.8mm 0.4mm C-plane DSP Inquire 2 weeks
      6505-009 φ100mm 0.65mm C-plane SSP Inquire 2 weeks
      6505-010 φ100mm 0.5mm C-plane DSP Inquire 2 weeks
      6505-011 φ150mm 1.0mm C-plane SSP Inquire 2 weeks
      6505-012 φ150mm 1.0mm C-plane DSP Inquire 2 weeks

      Al2O3 crystals or Sapphire is a multi-function crystal materials with excellent properties: good thermos-stability, high thermal conductivity, high hardness, high transmission at infrared wavelength rang and excellent chemical stability. Sapphire is widely used in industrial, defense and security and scientific research fields. sapphire is also an important substrate materials for high temperature superconductivity applications, it can be used for film growth of Y-series, La-series, and it is also used to grow the superconductivity film of MgB2.

      Hangzhou Shalom EO provides both stocked standard sapphire wafers and customs type wafers.

      Common Specifications:

      Materials Al2O3 crystals or sapphire Orientation Error ±0.5deg.
      Orientation A-plane <11-20> 2.379Å
      R-plane <1-102> 1.740Å
      M-plane <10-10> 1.375Å
      C-plane <0001> 2.165Å
      Maximum Diameter 6 inches Surface Finish SSP (single surface polished) or
      DSP (double surface polished)

      Basic Properties:

      Crystal Structure Hexagonal Unit Cell Constant a=4.748Å c=12.97Å
      Melt Point（℃） 2040℃ Crystal Purity 99.99%
      Density 3.98 （g/cm3） Hardness 9（mohs）
      Thermal Expansion（/℃） 7.5 x10-6 Dielectric Constants ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
      Thermal Conductivity（Calorie/℃ Cm.S） ⊥c //c
      23℃ 0.055 26℃ 0.060
      77℃ 0.040 70℃ 0.041
      Al2O3 Wafers D150x1.0mm <100> cut DSP

      Al2O3 Wafers D150x1.0mm <100> cut DSP

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      Al2O3 (Sapphire) Crystals and Substrates

      Al2O3 (Sapphire) Crystals and Substrates

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      Al2O3 Wafers 10x10x0.5mm <100> DSP

      Al2O3 Wafers 10x10x0.5mm <100> DSP

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