LSAT Substrates

Maximum diameter: 2 inches, typical thickness 0.5/1.0mm
Orientations of LSAT substrates:＜100＞,＜110＞,＜111＞
Stocked and customer LSAT substrate available
Surface Roughness: Ra < 0.5nm
Clean package: 1000 grade clean room and 100 grade bags
Applications: for epitaxial thin film growth in ferroelectric and high temperature superconductor (HTS) devices

Code	Size	Thickness	Orientation	Surface Finish	Unit Price	Delivery
643-001	5x5mm	0.5mm	<100>	SSP	Inquire	2 weeks
643-002	5x5mm	0.5mm	<100>	DSP	Inquire	2 weeks
643-003	5x5mm	0.5mm	<110>	SSP	Inquire	2 weeks
643-004	5x5mm	0.5mm	<111>	SSP	Inquire	2 weeks
643-005	10x10mm	0.5mm	<100>	SSP	Inquire	2 weeks
643-006	10x10mm	0.5mm	<100>	DSP	Inquire	2 weeks
643-007	10x10mm	0.5mm	<110>	SSP	Inquire	2 weeks
643-008	10x10mm	0.5mm	<111>	SSP	Inquire	2 weeks
643-009	Φ12.7mm	0.5mm	<100>	SSP	Inquire	2 weeks
643-010	Φ12.7mm	0.5mm	<100>	DSP	Inquire	2 weeks
643-011	Φ25.4mm	0.5mm	<100>	SSP	Inquire	2 weeks
643-012	Φ25.4mm	0.5mm	<100>	DSP	Inquire	2 weeks
643-013	Φ50.8mm	0.5mm	<100>	SSP	Inquire	Inquire
643-014	Φ50.8mm	0.5mm	<100>	DSP	Inquire	Inquire

LSAT - Lanthanum Strontium Aluminum Tantalum Oxide or (La,Sr)(Al,Ta)O3 is a mixed perovskite structure crystals, LSAT substrates is often used for epitaxial thin film growth in ferroelectric and high temperature superconductor (HTS) devices. LSAT is a hard, optically transparent oxide of the elements lanthanum, aluminum, strontium and tantalum, LSAT wafers are popular for epitaxial oxides and their heterostructures, often in the study of electron correlation phenomena. Typical materials grown on LSAT substrates include strontium titanate (SrTiO3), cuprate superconductors (such as YBCO), iron-based superconductors (iron-pnictides), rare-earth manganites, rare-earth nickelates and others. Semiconductors such as gallium nitride can also be grown on LSAT.

Hangzhou Shalom EO provides both stocked standard LSAT wafers and custom type wafers.

Common Specifications:

Material	LSAT crystals	Orientation	＜100＞,＜110＞,＜111＞
Orientation Error	±0.5°	Maximum Diameter	2 inches
Typical Thickness	0.5mm, 1.0mm	Thickness Tolerance	±0.05mm
Size Tolerance	±0.1mm	Surface Finish	SSP or DSP
Roughness	Ra<0.5nm	Cleaness and Package	1000 grade clean room, 100 grade bags

Basic Properties:

Growth Method	Czochralski method	Crystal Structure	M3
Unit Cell Constant	a=3.868 Å	Melt Point（℃）	1840
Density	6.74（g/cm³）	Hardness	6.5（mohs）
Dielectric Constants	22	Thermal Expansion	10 x 10^-6 /K

LSAT Substrates

LSAT Wafers 10x10x0.5mm <100> SSP

LSAT Wafers Φ12.7mmx0.5mm <100> SSP

LSAT Wafers 10x10x0.5mm <111> SSP