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LSAT Substrates

Features: 

  • Maximum Diameter: 2 inches
  • Custom wafers available upon request

Inquire for custom product  
Code Size Thickness Orientation Surface Finish Unit Price Delivery Cart
643-001 5x5mm 0.5mm <100> SSP Inquire 2 weeks
643-002 5x5mm 0.5mm <100> DSP Inquire 2 weeks
643-003 5x5mm 0.5mm <110> SSP Inquire 2 weeks
643-004 5x5mm 0.5mm <111> SSP Inquire 2 weeks
643-005 10x10mm 0.5mm <100> SSP Inquire 2 weeks
643-006 10x10mm 0.5mm <100> DSP Inquire 2 weeks
643-007 10x10mm 0.5mm <110> SSP Inquire 2 weeks
643-008 10x10mm 0.5mm <111> SSP Inquire 2 weeks
643-009 Φ12.7mm 0.5mm <100> SSP Inquire 2 weeks
643-010 Φ12.7mm 0.5mm <100> DSP Inquire 2 weeks
643-011 Φ25.4mm 0.5mm <100> SSP Inquire 2 weeks
643-012 Φ25.4mm 0.5mm <100> DSP Inquire 2 weeks
643-013 Φ50.8mm 0.5mm <100> SSP Inquire Inquire
643-014 Φ50.8mm 0.5mm <100> DSP Inquire Inquire

LSAT - Lanthanum Strontium Aluminum Tantalum Oxide or (La,Sr)(Al,Ta)O3 is a mixed perovskite structure crystals, LSAT substrates is often used  for epitaxial thin film growth in ferroelectric and high temperature superconductor (HTS) devices. LSAT is a hard, optically transparent oxide of the elements lanthanum, aluminum, strontium and tantalum, LSAT wafers are popular for epitaxial oxides and their heterostructures, often in the study of electron correlation phenomena. Typical materials grown on LSAT substrates include strontium titanate (SrTiO3), cuprate superconductors (such as YBCO), iron-based superconductors (iron-pnictides), rare-earth manganites, rare-earth nickelates and others. Semiconductors such as gallium nitride can also be grown on LSAT. 

Hangzhou Shalom EO provides both stocked standard LSAT wafers and custom type wafers.

Common Specifications:

Material LSAT crystals Orientation <100>,<110>,<111>
Orientation Error ±0.5° Maximum Diameter 2 inches
Typical Thickness 0.5mm, 1.0mm Thickness Tolerance ±0.05mm
Size Tolerance ±0.1mm Surface Finish SSP or DSP
Roughness Ra<0.5nm Cleaness and Package 1000 grade clean room, 100 grade bags

Basic Properties:

Growth Method Czochralski method Crystal Structure M3
Unit Cell Constant a=3.868 Å Melt Point(℃) 1840
Density 6.74(g/cm3 Hardness 6.5(mohs)
Dielectric Constants 22 Thermal Expansion 10 x 10-6 /K
LSAT Wafers Φ50.8mmx0.5mm <100> DSP

LSAT Wafers Φ50.8mmx0.5mm <100> DSP

LSAT Wafers Φ25.4mmx0.5mm <100> SSP

LSAT Wafers Φ25.4mmx0.5mm <100> SSP

LSAT Wafers 10x10x0.5mm <110> SSP

LSAT Wafers 10x10x0.5mm <110> SSP