MgAl2O4 Substrates

Stocked and custom MaAl2O4 (or Spinel) Substrates available
Maximum diameter: 2 inches, typical thickness 0.5/1.0mm
Surface Roughness: Ra < 0.5nm
Clean package: 1000 grade clean room and 100 grade bags
Orientation of MgAl2O4 substrates:＜100＞,＜110＞,＜111＞
Applications: epitaxial thin film growth in ferroelectric and high temperature superconductor (HTS) devices, growth of high quality GaN films, III-V nitrides device, bulk acoustic wave and microwave devices

Code	Size	Thickness	Orientation	Surface Finish	Unit Price	Delivery
644-001	5x5mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-002	5x5mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-003	5x5mm	0.5mm	<110>	SSP	Inquire	2 weeks
644-004	5x5mm	0.5mm	<111>	SSP	Inquire	2 weeks
644-005	10x10mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-006	10x10mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-007	10x10mm	0.5mm	<110>	SSP	Inquire	2 weeks
644-008	10x10mm	0.5mm	<111>	SSP	Inquire	2 weeks
644-009	Φ12.7mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-010	Φ12.7mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-011	Φ25.4mm	0.5mm	<100>	SSP	Inquire	2 weeks
644-012	Φ25.4mm	0.5mm	<100>	DSP	Inquire	2 weeks
644-013	Φ50.8mm	0.5mm	<100>	SSP	Inquire	Inquire
644-014	Φ50.8mm	0.5mm	<100>	DSP	Inquire	Inquire

Magnesium Aluminate (MgAl2O4 or spinel) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate. The crystallographic structure of MgAl2O4 is a spinel type (Fd3m), and its lattice constant is 8.083 A. MgAl2O4 is a relatively low-cost substrate material, which has been successfully applied to the growth of high quality GaN films. MgAl2O4 is cleaved on the (100) plane. GaN LD cavities have been obtained by simply cleaving MgAl2O4 substrates along the (100) direction, which will also work well for ZnO. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.

Hangzhou Shalom EO provides both stocked standard MgAl2O4 wafers and customs type wafers.

Common Specifications:

Material	MgAl2O4 crystals	Orientation	＜100＞,＜110＞,＜111＞
Orientation Error	±0.5°	Maximum Diameter	20mm
Typical Thickness	0.5mm, 1.0mm	Thickness Tolerance	±0.05mm
Size Tolerance	±0.1mm	Surface Finish	SSP or DSP
Roughness	Ra<0.5nm	Cleaness and Package	1000 grade clean room, 100 grade bags

Physical Properties:

Crystal Structure	Cubic: a = 8.083 Å	Growth Method	Czochralski
Density	3.64 g/cm³	Melt Point	2130℃
Hardness	8.0 (Mohns)	Thermal Expansion	7.45 (x10^-6/℃)
Phase Velocity	6500 m/s at (100> shear wave)	Propagation Loss	6.5 dB/ms
Typical Growth Direction	<100> and <110>	Color	Colorless
Dielectric Constant	8-9

MgAl2O4 Substrates

MgAl2O4 Wafers Φ25.4mmx0.5mm <100> DSP

MgAl2O4 Wafers 10x10x0.5mm <100> DSP

MgAl2O4 Wafers Φ12.7mmx0.5mm <100> SSP