Specifications:
| Materials | PPMgOCLN, Doping: 5mol% bulk | Aperture Size | 2(±0.1) x 0.5 (±0.05)mm |
| Thickness | 0.5(±0.1)mm | Length | 1mm |
| Flatness | < Lambda/8 @ 633nm | Wavefront Distortion | < Lambda/6 @ 633nm |
| Chips | <0.1mm | Surface Quality | 20/10 S/D |
| Parallelism | <10” | Perpendicularity | <10’ |
| Coating | AR coating | Applications | SHG 1029nm |
Chemical and Optical Properties:
| Melting Point | 1255+/-5℃ | Curie Point/Temperature | 1140+/-5℃ |
| Mohs Hardness | 5 | Density | 4.648(5)g/cm3 |
| Thermal Conductivity | 38W/m/K @ 25℃ | Coefficient of Thermal Expansion | //a, 2.0x10-6/K //c, 2.2x10-6/K |
| Wavelength Range of Transmission | 420nm ~ 5200nm | Nonlinear Coefficient | d33 = 34.4 pm/V d31 = d15 = 5.95 pm/V d22 = 3.07 pm/V |
| Optical Damaging Threshold | 0.3GW/cm2 | Absorptive Coefficient | 0.004/cm @ 1064nm |
MgO:PPLN Crystals for SHG 1029nm, 2.0x0.5x1mm Code: 2091-007
Magnesium-doped PPLN demonstrates superior properties in innovative laser applications owing to its elevated effective nonlinear coefficient, enabling frequency conversion across diverse mechanisms with high efficiencies. Hangzhou Shalom EO offers a series of standard and custom MgO:PPLN crystal chips and MgO:PPLN waveguides. Standard input wavelengths include 976nm, 1029nm,1064nm, 1545nm, 1550nm, 1560nm, 2100nm, etc. to deliver an output wavelength coverage ranging from the visible to mid-infrared spectral region, whereas other custom wavelengths are also available. Facilities of forefront technologies are equipped for the production of PPLN crystals. During the fabrication process, using a mask, the electrode patterns are defined on the wafer, and the metal will be deposited after a lithographic process. The application of a high-voltage electric field will switch the position of the lithium ion and niobate ion within a defined domain, forming periodically flipped dipole orientations. After the whole electric field poling procedure is done, the LiNbO3 wafer is diced into miniature chips and then further processed with high altitudes of precision control. With unparalleled advantages of high conversion efficiencies, high damage threshold, exceptional optical transmittance, and thermal characteristics, our MgO:PPLN crystals and waveguides are attractive candidates for various frequency conversion processes including up-conversion (SHG/SFG) and down-conversion (DFG/OPA/OPG/OPO), being able to withstand high power intensities. Besides, miscellaneous QPM structures are all procurable in Shalom EO.
