Specifications:
| Material | LaAlO3 crystals | Orientation | ＜100＞ |
| Orientation Error | ±0.5° | Size | φ25.4mm |
| Thickness | 0.5(±0.05)mm | Surface Finish | DSP |
| Roughness | Ra<0.5nm | Cleaness and Package | 1000 grade clean room, 100 grade bags |
Basic Properties:
| Crystal Structure | M6(normal temperature) M3(>435℃) |
Unit Cell Constant | M6 a=5.357Å c=13.22Å M3 a=3.821Å |
| Melt Point(℃) | 2080 | Density | 6.52(g/cm3) |
| Hardness | 6-6.5(mohs) | Thermal Expansion | 9.4x10-6/℃ |
| Dielectric Constants | ε=21 | Secant Loss(10ghz) | ~3×10-4@300k, ~0.6×10-4@77k |
| Color and Appearance | To anneal and conditions differ from brown to brownish | Chemical Stability | Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3pO4 |
| Characteristics | For microwave electron device |
LaAlO3 (Lanthanum aluminate) single crystal has a good lattice match to many materials with perovskite structure. It is an excellent wafers for epitaxial growth of high temperature superconductors (HTS) , magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Hangzhou Shalom EO not only provides the stocked standard epi ready LaAlO3 wafers, but also the custom type wafers upon your request.
