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LSAT Substrates

      • Maximum diameter: 2 inches
      • Custom wafers available upon request
      Inquire for custom product  
      Code Size Thickness Orientation Surface Finish Unit Price Delivery Cart
      643-001 5x5mm 0.5mm <100> SSP Inquire 2 weeks
      643-002 5x5mm 0.5mm <100> DSP Inquire 2 weeks
      643-003 5x5mm 0.5mm <110> SSP Inquire 2 weeks
      643-004 5x5mm 0.5mm <111> SSP Inquire 2 weeks
      643-005 10x10mm 0.5mm <100> SSP Inquire 2 weeks
      643-006 10x10mm 0.5mm <100> DSP Inquire 2 weeks
      643-007 10x10mm 0.5mm <110> SSP Inquire 2 weeks
      643-008 10x10mm 0.5mm <111> SSP Inquire 2 weeks
      643-009 Φ12.7mm 0.5mm <100> SSP Inquire 2 weeks
      643-010 Φ12.7mm 0.5mm <100> DSP Inquire 2 weeks
      643-011 Φ25.4mm 0.5mm <100> SSP Inquire 2 weeks
      643-012 Φ25.4mm 0.5mm <100> DSP Inquire 2 weeks
      643-013 Φ50.8mm 0.5mm <100> SSP Inquire Inquire
      643-014 Φ50.8mm 0.5mm <100> DSP Inquire Inquire

      LSAT - Lanthanum Strontium Aluminum Tantalum Oxide or (La,Sr)(Al,Ta)O3 is a mixed perovskite structure crystals, LSAT substrates is often used  for epitaxial thin film growth in ferroelectric and high temperature superconductor (HTS) devices. LSAT is a hard, optically transparent oxide of the elements lanthanum, aluminum, strontium and tantalum, LSAT wafers are popular for epitaxial oxides and their heterostructures, often in the study of electron correlation phenomena. Typical materials grown on LSAT substrates include strontium titanate (SrTiO3), cuprate superconductors (such as YBCO), iron-based superconductors (iron-pnictides), rare-earth manganites, rare-earth nickelates and others. Semiconductors such as gallium nitride can also be grown on LSAT. 

      Hangzhou Shalom EO provides both stocked standard LSAT wafers and custom type wafers.

      Common Specifications:

      Material LSAT crystals Orientation <100>,<110>,<111>
      Orientation Error ±0.5° Maximum Diameter 2 inches
      Typical Thickness 0.5mm, 1.0mm Thickness Tolerance ±0.05mm
      Size Tolerance ±0.1mm Surface Finish SSP or DSP
      Roughness Ra<0.5nm Cleaness and Package 1000 grade clean room, 100 grade bags

      Basic Properties:

      Growth Method Czochralski method Crystal Structure M3
      Unit Cell Constant a=3.868 Å Melt Point(℃) 1840
      Density 6.74(g/cm3 Hardness 6.5(mohs)
      Dielectric Constants 22 Thermal Expansion 10 x 10-6 /K
      LSAT Wafers Φ25.4mmx0.5mm <100> DSP

      LSAT Wafers Φ25.4mmx0.5mm <100> DSP

      LSAT Wafers 10x10x0.5mm <111> SSP

      LSAT Wafers 10x10x0.5mm <111> SSP

      LSAT Wafers Φ50.8mmx0.5mm <100> DSP

      LSAT Wafers Φ50.8mmx0.5mm <100> DSP