Sapphire (Al2O3) Substrates

High transmission at 0.17 to 5.0μm range and excellent chemical stability
Maximum diameter: 6 inches
Clean package: 1000 grade clean room and 100 grade bags and boxes
Orientations: <10000>, A-cut or custom.
Applications: film growth of Y-series, La-series, growth of MgB2 superconductivity film, Group III nitride semiconductors such as blue and white LEDs, sapphire watch glalss, optical windows, lenses for industrial, R&D applications.

Code	Size	Thickness	Orientation	Surface Finish	Unit Price	Delivery
6505-001	10x10mm	0.5mm	C-plane	SSP	Inquire	2 weeks
6505-002	10x10mm	0.5mm	C-plane	DSP	Inquire	2 weeks
6505-003	Φ12.7mm	0.5mm	C-plane	SSP	Inquire	2 weeks
6505-004	Φ12.7mm	0.5mm	C-plane	DSP	Inquire	2 weeks
6505-005	Φ25.4mm	0.5mm	C-plane	SSP	Inquire	2 weeks
6505-006	Φ25.4mm	0.5mm	C-plane	DSP	Inquire	2 weeks
6505-007	φ50.8mm	0.43mm	C-plane	SSP	Inquire	2 weeks
6505-008	φ50.8mm	0.4mm	C-plane	DSP	Inquire	2 weeks
6505-009	φ100mm	0.65mm	C-plane	SSP	Inquire	2 weeks
6505-010	φ100mm	0.5mm	C-plane	DSP	Inquire	2 weeks
6505-011	φ150mm	1.0mm	C-plane	SSP	Inquire	2 weeks
6505-012	φ150mm	1.0mm	C-plane	DSP	Inquire	2 weeks

Al2O3 crystals or Sapphire is a multi-function crystal materials with excellent properties: good thermos-stability, high thermal conductivity, high hardness, high transmission at infrared wavelength rang and excellent chemical stability. Sapphire is widely used in industrial, defense and security and scientific research fields. sapphire is also an important substrate materials for high temperature superconductivity applications, it can be used for film growth of Y-series, La-series, and it is also used to grow the superconductivity film of MgB2.

Hangzhou Shalom EO provides both stocked standard sapphire wafers and customs type wafers.

Common Specifications:

Materials	Al2O3 crystals or sapphire	Orientation Error	±0.5deg.
Orientation	A-plane	<11-20>	2.379Å
	R-plane	<1-102>	1.740Å
	M-plane	<10-10>	1.375Å
	C-plane	<0001>	2.165Å
Maximum Diameter	6 inches	Surface Finish	SSP (single surface polished) or DSP (double surface polished)

Basic Properties:

Crystal Structure	Hexagonal	Unit Cell Constant	a=4.748Å c=12.97Å
Melt Point（℃）	2040℃	Crystal Purity	99.99%
Density	3.98 （g/cm³）	Hardness	9（mohs）
Thermal Expansion（/℃）	7.5 x10^-6	Dielectric Constants	~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Thermal Conductivity（Calorie/℃ Cm.S）		⊥c	//c
	23℃	0.055	26℃ 0.060
	77℃	0.040	70℃ 0.041

Curves:

1）Typical X-Ray Diffraction (XRD) Curve of Sapphire (Al2O3) Crystals Substrates

2) Typical Surface Roughness of Sapphire (Al2O3) substrate <0001> measured by Atomic Force Microscope (AFM) in 5μm x 5μm Scale

Sapphire (Al2O3) Substrates

Al2O3 Wafers Φ12.7mmx0.5mm <100> SSP

Al2O3 Wafers D100x0.5mm <100> cut DSP

Al2O3 Wafers Φ25.4mmx0.5mm <100> DSP