Specifications:
Clear Aperture
|
3.6mm
|
Wavelength
|
410-3500nm
|
Dimension
|
Ф25.4x39mm
|
Extinction Ratio@1064nm
|
>1000:1
|
Connectors
|
Pin connectors (gold plated)
|
Insertion loss
|
<2%
|
Crystal size
|
4x4x20mm
|
Quarter Wave Voltage
|
~4800V
|
Capacitance
|
<4pF
|
Damaging Threshold
|
>500MW/cm^2@1064nm,10ns,10Hz
Homogeneous intracavity laser light beam with no hot point
|
Note:All the parameters listed above are measured at wavelength 1064nm
The feature of this module of BBO pockels cells is the small caliber suitable for compact design, and the crystal is mounted by fused silica glass to raise the thermal conductivity of the crystal. The external form and internal structure could be modified according to your requirements.
Hangzhou Shalom EO offers the off-the-shelf and custom BBO Pockels Cells with high damage threshold, low insertion loss, high extinction ratio, minimal piezoelectric ringing and competitive price. BBO Pockels Cells with both Single and double BBO crystal design and low -voltage geometry are available upon requests.
Features of BBO crystal:
- Ultra-thin crystals can be used for ultra-fast (<10 fs) applications
- Wide phase matching range of various second-order nonlinear interactions in almost the entire transparent range
- The highest nonlinearity among all UV nonlinear crystals
- High laser induced damage threshold (LIDT)
- Wide transmittance range from 188 nm to 5.2μm (appropriate transparency @3μm-5.2μm, tens of μm thick crystal)
- Extremely low capacitance (1< pF) will permit high repetition rate switching with rise times on the order of 100 ps or less
- High damage threshold capable of withstanding high peak power intensities of samller beam size and therefore suitable for compact design ( However, small crystal aperture leads to diffraction losses and hence might increase the insertion losses.)
- Not prone to piezo-electric ringing
- Low absorption and associated laser-induced thermal birefringence
- High extinction ratio
Applications:
- High repetition rate DPSS Q-switches
- High repetition rate regenerative amplifier control
- Cavity dumping and Beam chopper
- Low dispersion suitable for short pulse regenerative amplifiers
Single-crystal
410-3500nm
Ф25.4x39mm
3.6mm
>1000:1
>500MW/cm^2
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